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In situ control of electron gas dimensionality in freely suspended semiconductor membranes

In situ control of electron gas dimensionality in freely suspended semiconductor membranes

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HÖHBERGER, Eva M., Tomas KRÄMER, Werner WEGSCHEIDER, Robert H. BLICK, 2003. In situ control of electron gas dimensionality in freely suspended semiconductor membranes. In: Applied Physics Letters. 82(23), pp. 4160-4162. ISSN 0003-6951. eISSN 1077-3118

@article{Hohberger2003contr-25565, title={In situ control of electron gas dimensionality in freely suspended semiconductor membranes}, year={2003}, doi={10.1063/1.1580641}, number={23}, volume={82}, issn={0003-6951}, journal={Applied Physics Letters}, pages={4160--4162}, author={Höhberger, Eva M. and Krämer, Tomas and Wegscheider, Werner and Blick, Robert H.} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/25565"> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:language>eng</dc:language> <dc:creator>Wegscheider, Werner</dc:creator> <dc:contributor>Blick, Robert H.</dc:contributor> <dcterms:bibliographicCitation>Applied Physics Letters ; 82 (2003), 23. - S. 4160-4162</dcterms:bibliographicCitation> <dc:contributor>Krämer, Tomas</dc:contributor> <dc:creator>Höhberger, Eva M.</dc:creator> <dcterms:abstract xml:lang="eng">We present fabrication and measurements of gated suspended low-dimensional electron systems. The core component of the device is a low-dimensional electron gas embedded in a free-standing beam processed from a GaAs/AlGaAs heterostructure. The dimensionality of the electronic system is fully controlled by a number of gating electrodes on the suspended membranes. Operation in the quantum Hall regime, in the one-dimensional case, and as zero-dimensional quantum dots is demonstrated. The resulting devices can be applied as ultrasensitive bolometers and as nanoelectromechanical circuits that reach the ultimate limits of displacement detection.</dcterms:abstract> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-19T13:48:44Z</dc:date> <dc:contributor>Höhberger, Eva M.</dc:contributor> <dc:creator>Blick, Robert H.</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-19T13:48:44Z</dcterms:available> <dc:creator>Krämer, Tomas</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/25565"/> <dc:rights>deposit-license</dc:rights> <dc:contributor>Wegscheider, Werner</dc:contributor> <dcterms:title>In situ control of electron gas dimensionality in freely suspended semiconductor membranes</dcterms:title> <dcterms:issued>2003</dcterms:issued> </rdf:Description> </rdf:RDF>

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