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Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors

Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors

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ANILE, Angelo Marcello, Michael JUNK, Vittorio ROMANO, Giovanni RUSSO, 2000. Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors. In: Mathematical Models and Methods in Applied Sciences. 10(06), pp. 833-861. ISSN 0218-2025. eISSN 1793-6314

@article{Anile2000Cross-25475, title={Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors}, year={2000}, doi={10.1142/S0218202500000434}, number={06}, volume={10}, issn={0218-2025}, journal={Mathematical Models and Methods in Applied Sciences}, pages={833--861}, author={Anile, Angelo Marcello and Junk, Michael and Romano, Vittorio and Russo, Giovanni} }

Anile, Angelo Marcello deposit-license Junk, Michael Junk, Michael Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors Romano, Vittorio The numerical integration of the hydrodynamical model of semiconductors based on extended thermodynamics has been tackled. On account of the mathematical complexity of the system, no theoretical conditions of convergence are available for the existing schemes. Therefore in order to obtain numerical solution it was almost mandatory to resort to a cross-validation comparing the results given by two different methods. The kinetic scheme and the finite difference method represented by a suitable modification of the Nessyahu–Tadmor scheme furnish numerical results for the ballistic diode problem in good agreement even for non-smooth solutions. 2013-12-18T07:29:34Z eng Anile, Angelo Marcello Romano, Vittorio 2000 Mathematical models & methods in applied sciences : M3AS ; 10 (2000), 6. - S. 833-861 Russo, Giovanni Russo, Giovanni 2013-12-18T07:29:34Z

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