Defect characterization and investigation of RST-silicon ribbon wafers

Cite This

Files in this item

Checksum: MD5:34e032c334dc36f0b41a48600dbc8837

KELLER, Philipp, Annika ZUSCHLAG, Philipp KARZEL, Fabrice DE MORO, Giso HAHN, 2013. Defect characterization and investigation of RST-silicon ribbon wafers. 28th European Photovoltaic Solar Energy Conference and Exhibition. Paris, Sep 30, 2013 - Oct 4, 2013. In: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013) ; Paris, France ; conference 30 September - 04 October 2013. München:WIP, pp. 1512-1517. ISBN 3-936338-33-7. Available under: doi: 10.4229/28thEUPVSEC2013-2BV.3.56

@inproceedings{Keller2013Defec-25269, title={Defect characterization and investigation of RST-silicon ribbon wafers}, year={2013}, doi={10.4229/28thEUPVSEC2013-2BV.3.56}, isbn={3-936338-33-7}, address={München}, publisher={WIP}, booktitle={Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013) ; Paris, France ; conference 30 September - 04 October 2013}, pages={1512--1517}, author={Keller, Philipp and Zuschlag, Annika and Karzel, Philipp and de Moro, Fabrice and Hahn, Giso} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/25269"> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-04T10:20:30Z</dcterms:available> <dc:creator>Hahn, Giso</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/25269"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:bibliographicCitation>Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013). - Paris, 2013. - S. 1512-1517. - ISBN 3-936338-33-7</dcterms:bibliographicCitation> <dc:contributor>Zuschlag, Annika</dc:contributor> <dcterms:rights rdf:resource="https://kops.uni-konstanz.de/page/termsofuse"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-04T10:20:30Z</dc:date> <dc:creator>Karzel, Philipp</dc:creator> <dcterms:title>Defect characterization and investigation of RST-silicon ribbon wafers</dcterms:title> <dc:language>eng</dc:language> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/25269/2/Keller_252691.pdf"/> <dcterms:abstract xml:lang="eng">The electronic and material properties of Ribbon on Sacrificial Template (RST) silicon wafers are investigated in this work. Like all multicrystalline wafers, RST wafers exhibit many grain boundaries, impurities and other crystal defects. The understanding of these defects and their influence on material quality is an important part of the characterization of solar cell material. The minority carrier lifetime of RST samples after POCl3 diffusion and SiNx:Hy hydrogenation is obtained by quasi-steady state photo conductance decay measurements. The distribution of lifetime on a wafer and the influence of grain boundaries and bulk resistivity are studied via photoluminescence imaging. Local defects, revealed with the help of a defect etch, are qualitatively correlated to lifetime values. The crystal orientation and the type of the grain boundaries between the different grains was measured with electron back scatter diffraction. The most common grain boundaries in the investigated area are of coincidence type 3. SiC particles on the silicon surface as residues of ribbon casting are studied by scanning electron microscopy. A focused ion beam cut through a SiC particle reveals the interface structure between these particles and the silicon wafer surface.</dcterms:abstract> <dc:contributor>Karzel, Philipp</dc:contributor> <dc:creator>Zuschlag, Annika</dc:creator> <dcterms:issued>2013</dcterms:issued> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/25269/2/Keller_252691.pdf"/> <dc:creator>Keller, Philipp</dc:creator> <dc:rights>terms-of-use</dc:rights> <dc:contributor>de Moro, Fabrice</dc:contributor> <dc:creator>de Moro, Fabrice</dc:creator> <dc:contributor>Keller, Philipp</dc:contributor> </rdf:Description> </rdf:RDF>

Downloads since Oct 1, 2014 (Information about access statistics)

Keller_252691.pdf 44

This item appears in the following Collection(s)

Search KOPS


Browse

My Account