Surface passivation study on gettered multicrystalline silicon

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:cb62773e32bd4815c24e427b97654882

GINDNER, Sarah, Bernhard HERZOG, Giso HAHN, 2013. Surface passivation study on gettered multicrystalline silicon. 28th European Photovoltaic Solar Energy Conference and Exhibition. Paris, 30. Sep 2013 - 4. Okt 2013. In: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013) ; Paris, France ; conference 30 September - 04 October 2013. 28th European Photovoltaic Solar Energy Conference and Exhibition. Paris, 30. Sep 2013 - 4. Okt 2013. München:WIP, pp. 1403-1407. ISBN 3-936338-33-7

@inproceedings{Gindner2013Surfa-25261, title={Surface passivation study on gettered multicrystalline silicon}, year={2013}, doi={10.4229/28thEUPVSEC2013-2BV.3.7}, isbn={3-936338-33-7}, address={München}, publisher={WIP}, booktitle={Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013) ; Paris, France ; conference 30 September - 04 October 2013}, pages={1403--1407}, author={Gindner, Sarah and Herzog, Bernhard and Hahn, Giso} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/25261"> <dcterms:title>Surface passivation study on gettered multicrystalline silicon</dcterms:title> <dc:creator>Gindner, Sarah</dc:creator> <dcterms:bibliographicCitation>Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013). - Paris, 2013. - S. 1403 - 1407. - ISBN 3-936338-33-7</dcterms:bibliographicCitation> <dc:language>eng</dc:language> <dc:creator>Herzog, Bernhard</dc:creator> <dc:rights>deposit-license</dc:rights> <dc:contributor>Gindner, Sarah</dc:contributor> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/25261"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-04T09:57:10Z</dc:date> <dcterms:issued>2013</dcterms:issued> <dc:contributor>Herzog, Bernhard</dc:contributor> <dc:creator>Hahn, Giso</dc:creator> <dcterms:abstract xml:lang="eng">In this study the electronic quality of multicrystalline silicon material in the as grown state and after various POCl3 diffusion steps is analyzed. For this purpose two different surface passivations (quinhydrone-methanol and a-Si:H) are tested and also their reproducibility is checked. It is found that the chemical passivation using quinhydrone-methanol is more complicated to apply for detecting small differences on a relatively high lifetime level which can be reached by the applied POCl3 diffusions on the Si materials under investigation.</dcterms:abstract> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-04T09:57:10Z</dcterms:available> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

Gindner_252610.pdf 65

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto