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Study on boron emitter formation by BBr<sub>3</sub> diffusion for n-type Si solar cell applications

Study on boron emitter formation by BBr3 diffusion for n-type Si solar cell applications

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SCHIELE, Yvonne, Simon FAHR, Sebastian JOOS, Giso HAHN, Barbara TERHEIDEN, 2013. Study on boron emitter formation by BBr3 diffusion for n-type Si solar cell applications. 28th European Photovoltaic Solar Energy Conference and Exhibition. Paris, 30. Sep 2013 - 4. Okt 2013. In: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013) ; Paris, France ; conference 30 September - 04 October 2013. 28th European Photovoltaic Solar Energy Conference and Exhibition. Paris, 30. Sep 2013 - 4. Okt 2013. München:WIP, pp. 1242-1247. ISBN 3-936338-33-7. Available under: doi: 10.4229/28thEUPVSEC2013-2BV.2.9

@inproceedings{Schiele2013Study-25258, title={Study on boron emitter formation by BBr3 diffusion for n-type Si solar cell applications}, year={2013}, doi={10.4229/28thEUPVSEC2013-2BV.2.9}, isbn={3-936338-33-7}, address={München}, publisher={WIP}, booktitle={Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013) ; Paris, France ; conference 30 September - 04 October 2013}, pages={1242--1247}, author={Schiele, Yvonne and Fahr, Simon and Joos, Sebastian and Hahn, Giso and Terheiden, Barbara} }

deposit-license Joos, Sebastian Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2013). - Paris, 2013. - S. 1242 - 1247. - ISBN 3-936338-33-7 Fahr, Simon Terheiden, Barbara Schiele, Yvonne Study on boron emitter formation by BBr<sub>3</sub> diffusion for n-type Si solar cell applications 2013-12-04T09:22:31Z Hahn, Giso eng Solar cells based on ntype cSi wafers have raised growing interest since they feature clear advantages compared to the standard ptype Si substrates. A promising technology to establish the n-type solar cell’s pn junction is thermal diffusion of boron atoms into the Si surface from a boron tribromide (BBr3) source. Boron emitters are characterized in terms of surface doping density, depth and shape of the doping profile, resulting sheet resistance and its uniformity on a large-area wafer as well as emitter saturation current density. In addition, the emitter is to be utilizable in a solar cell production process aiming at an undiminished carrier lifetime in the Si substrate, a reduction of process duration and good removability of the borosilicate glass layer. By optimizing these emitter characteristics, the efficiency of ntype solar cells can be significantly enhanced. In order to achieve a desired boron emitter, diffusion process parameters such as temperatures, gas flows and periods of individual process steps are systematically varied. Predictions which kinds of emitters will result from various process parameters can be derived, helping to understand the B emitter formation from a BBr3 source. Terheiden, Barbara Hahn, Giso Joos, Sebastian 2013-12-04T09:22:31Z Fahr, Simon 2013 Schiele, Yvonne

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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