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Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

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WILKING, Svenja, Sebastian EBERT, Axel HERGUTH, Giso HAHN, 2013. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon. In: Journal of Applied Physics. 114(19), 194512. ISSN 0021-8979. eISSN 1089-7550

@article{Wilking2013Influ-25247, title={Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon}, year={2013}, doi={10.1063/1.4833243}, number={19}, volume={114}, issn={0021-8979}, journal={Journal of Applied Physics}, author={Wilking, Svenja and Ebert, Sebastian and Herguth, Axel and Hahn, Giso}, note={Article Number: 194512} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/25247"> <dc:creator>Herguth, Axel</dc:creator> <dc:contributor>Herguth, Axel</dc:contributor> <dcterms:bibliographicCitation>Journal of Applied Physics ; 114 (2013), 19. - 194512</dcterms:bibliographicCitation> <dc:contributor>Hahn, Giso</dc:contributor> <dc:creator>Wilking, Svenja</dc:creator> <dc:contributor>Ebert, Sebastian</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/25247"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-11-26T17:45:54Z</dcterms:available> <dc:contributor>Wilking, Svenja</dc:contributor> <dc:creator>Ebert, Sebastian</dc:creator> <dc:language>eng</dc:language> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-11-26T17:45:54Z</dc:date> <dc:creator>Hahn, Giso</dc:creator> <dcterms:title>Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon</dcterms:title> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:rights>deposit-license</dc:rights> <dcterms:abstract xml:lang="eng">The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects.</dcterms:abstract> <dcterms:issued>2013</dcterms:issued> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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