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Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence

Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence

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GIESECKE, Johannes, Martin SCHUBERT, Wilhelm WARTA, 2012. Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence. In: physica status solidi (a). 209(11), pp. 2286-2290. ISSN 1862-6300. eISSN 1521-396X

@article{Giesecke2012Self--25079, title={Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence}, year={2012}, doi={10.1002/pssa.201228383}, number={11}, volume={209}, issn={1862-6300}, journal={physica status solidi (a)}, pages={2286--2290}, author={Giesecke, Johannes and Schubert, Martin and Warta, Wilhelm} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/25079"> <dc:creator>Giesecke, Johannes</dc:creator> <dc:rights>deposit-license</dc:rights> <dcterms:issued>2012</dcterms:issued> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-11-06T21:00:44Z</dcterms:available> <dc:contributor>Giesecke, Johannes</dc:contributor> <dc:creator>Warta, Wilhelm</dc:creator> <dc:contributor>Warta, Wilhelm</dc:contributor> <dc:creator>Schubert, Martin</dc:creator> <dcterms:bibliographicCitation>Physica Status Solidi A : Applications and Materials Science ; 209 (2013), 11. - S. 2286–2290</dcterms:bibliographicCitation> <dcterms:abstract xml:lang="eng">Quasi-steady-state photoluminescence is a versatile technique to determine carrier lifetime in silicon. A recent approach extracts carrier lifetime without a priori information about dopant concentration [Appl. Phys. Lett. 97, 092109 (2010)]. It utilizes the phase shift between a time-modulated optical irradiation and the radiative recombination of a sample, while requiring a minimum of two measurements. The present paper is aimed at a generalization thereof that requires only one measurement. It brings about a substantial experimental simplification, significantly improved accuracy and precision, and it opens up paths to access material properties other than lifetime.</dcterms:abstract> <dc:language>eng</dc:language> <dc:contributor>Schubert, Martin</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-11-06T21:00:44Z</dc:date> <dcterms:title>Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence</dcterms:title> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/25079"/> </rdf:Description> </rdf:RDF>

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