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Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion

Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion

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FENNING, David P., Annika ZUSCHLAG, Mariana BERTONI, Barry LAI, Giso HAHN, Tonio BUONASSISI, 2013. Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion. In: Journal of Applied Physics. 113(21), 214504. ISSN 0021-8979. eISSN 1089-7550

@article{Fenning2013Impro-25030, title={Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion}, year={2013}, doi={10.1063/1.4808310}, number={21}, volume={113}, issn={0021-8979}, journal={Journal of Applied Physics}, author={Fenning, David P. and Zuschlag, Annika and Bertoni, Mariana and Lai, Barry and Hahn, Giso and Buonassisi, Tonio}, note={Article Number: 214504} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/25030"> <dc:creator>Lai, Barry</dc:creator> <dc:language>eng</dc:language> <dcterms:abstract xml:lang="eng">The efficacy of higher-temperature gettering processes in reducing precipitated iron concentrations is assessed by synchrotron-based micro-X-ray fluorescence. By measuring the same grain boundary before and after phosphorus diffusion in a set of wafers from adjacent ingot heights, the reduction in size of individual precipitates is measured as a function of gettering temperature in samples from the top of an ingot intentionally contaminated with iron in the melt. Compared to a baseline 820 °C phosphorus diffusion, 870 °C and 920 °C diffusions result in a larger reduction in iron-silicide precipitate size. Minority carrier lifetimes measured on wafers from the same ingot heights processed with the same treatments show that the greater reduction in precipitated metals is associated with a strong increase in lifetime. In a sample contaminated with both copper and iron in the melt, significant iron gettering and complete dissolution of detectable copper precipitates is observed despite the higher total metal concentration. Finally, a homogenization pre-anneal in N2 at 920 °C followed by an 820 °C phosphorus diffusion produces precipitate size reductions and lifetimes similar to an 870 °C phosphorus diffusion without lowering the emitter sheet resistance.</dcterms:abstract> <dc:creator>Zuschlag, Annika</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-11-06T19:29:35Z</dcterms:available> <dc:contributor>Fenning, David P.</dc:contributor> <dc:creator>Bertoni, Mariana</dc:creator> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:creator>Buonassisi, Tonio</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-11-06T19:29:35Z</dc:date> <dc:contributor>Hahn, Giso</dc:contributor> <dc:rights>deposit-license</dc:rights> <dc:contributor>Buonassisi, Tonio</dc:contributor> <dc:contributor>Bertoni, Mariana</dc:contributor> <dcterms:title>Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion</dcterms:title> <dc:creator>Fenning, David P.</dc:creator> <dc:creator>Hahn, Giso</dc:creator> <dcterms:bibliographicCitation>Journal of Applied Physics ; 113 (2013), 21. - 214504</dcterms:bibliographicCitation> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/25030"/> <dc:contributor>Zuschlag, Annika</dc:contributor> <dcterms:issued>2013</dcterms:issued> <dc:contributor>Lai, Barry</dc:contributor> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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