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Plasmon Resonances for Sub-100 nm Silicon Ablation : Quantitative Measurement and Nanometer-Scale Ablation Mechanism

Plasmon Resonances for Sub-100 nm Silicon Ablation : Quantitative Measurement and Nanometer-Scale Ablation Mechanism

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KOLLOCH, Mihai Andreas Jonas, 2012. Plasmon Resonances for Sub-100 nm Silicon Ablation : Quantitative Measurement and Nanometer-Scale Ablation Mechanism [Dissertation]. Konstanz: University of Konstanz

@phdthesis{Kolloch2012Plasm-23193, title={Plasmon Resonances for Sub-100 nm Silicon Ablation : Quantitative Measurement and Nanometer-Scale Ablation Mechanism}, year={2012}, author={Kolloch, Mihai Andreas Jonas}, address={Konstanz}, school={Universität Konstanz} }

eng Plasmon Resonances for Sub-100 nm Silicon Ablation : Quantitative Measurement and Nanometer-Scale Ablation Mechanism 2013-07-16T11:49:01Z Kolloch, Mihai Andreas Jonas deposit-license Kolloch, Mihai Andreas Jonas This dissertation provides a detailed overview of the mechanism behind direct ablation as a near-field photography technique and explores the possibilities and limitations of plasmonic near fields for the nanostructuring of substrates by direct ablation. Two main aspects of plasmonic near-field ablation are examined in greater detail.<br /><br /><br />First, highly detailed measurements of the near-field ablation distribution as well as quantitative measurements of the maximum near-field enhancement are presented. Those measurements are compared to Finite Difference in the Time Domain (FDTD) simulations which show good agreement in the intensity distribution. Comparing the values for the maximum fluence enhancement, however, a deviation between experiment and simulation is found. The simulated maximum intensity enhancement is larger than the measured one by a factor of between 4 to 10 depending on the size and shape of the plasmonic particle.<br /><br /><br />To comprehend this deviation, the mechanism responsible for the plasmonic near-field ablation of silicon is examined in more detail. Here, ablation features with a scale down to an eightieth of the illuminating wavelength are presented. Additionally, a mechanism limiting the minimum ablation volume for direct ablation of semiconductors is described. 2012 2013-07-16T11:49:01Z

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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