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Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub>-stacks at increased temperatures : avoiding blistering during contact firing

Al2O3/SiNx-stacks at increased temperatures : avoiding blistering during contact firing

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LÜDER, Thomas, Thomas LAUERMANN, Annika ZUSCHLAG, Giso HAHN, Barbara TERHEIDEN, 2012. Al2O3/SiNx-stacks at increased temperatures : avoiding blistering during contact firing. In: Energy Procedia. 27, pp. 426-431. ISSN 1876-6102. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2012.07.088

@article{Luder2012stack-23115, title={Al2O3/SiNx-stacks at increased temperatures : avoiding blistering during contact firing}, year={2012}, doi={10.1016/j.egypro.2012.07.088}, volume={27}, issn={1876-6102}, journal={Energy Procedia}, pages={426--431}, author={Lüder, Thomas and Lauermann, Thomas and Zuschlag, Annika and Hahn, Giso and Terheiden, Barbara} }

Lüder, Thomas 2013-05-14T07:34:45Z deposit-license Zuschlag, Annika Lüder, Thomas Lauermann, Thomas Hahn, Giso Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub>-stacks at increased temperatures : avoiding blistering during contact firing Terheiden, Barbara Hahn, Giso We investigate the passivation stability and blister formation during firing at 800°C of an Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> stack deposited on p-type float zone silicon at different Al<sub>2</sub>O<sub>3</sub> deposition set temperatures ranging from 170°C to 400°C. The actual wafer temperatures during Al2O3 deposition in the FlexAL reactor are determined using spectroscopic ellipsometry. After the firing step blistering can be observed for stacks featuring 15 nm thick Al<sub>2</sub>O<sub>3</sub> layers grown at 170°C set temperature. We show that the deposition of the layer at higher set temperatures of 250°C, 300°C and 400°C reduces blister formation significantly. After firing, stacks with 15 nm thick Al<sub>2</sub>O<sub>3</sub> layers deposited at set temperatures of 250°C and 300°C show the best passivation resulting in effective surface recombination velocities below 5 cm/s without significant blister formation. Lauermann, Thomas eng Energy Procedia ; 27 (2012). - S. 426-431 2012 Zuschlag, Annika 2013-05-14T07:34:45Z Terheiden, Barbara

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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