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Electrical, optical and structural investigation of low-temperature PECV-deposited hydrogenated amphorous silicon-oxynitride films for surface passivation of crystalline silicon solar cells

Electrical, optical and structural investigation of low-temperature PECV-deposited hydrogenated amphorous silicon-oxynitride films for surface passivation of crystalline silicon solar cells

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SOMMER, Daniel, Nils BRINKMANN, Gabriel MICARD, Giso HAHN, Barbara TERHEIDEN, 2012. Electrical, optical and structural investigation of low-temperature PECV-deposited hydrogenated amphorous silicon-oxynitride films for surface passivation of crystalline silicon solar cells. 27th European Photovoltaic Solar Energy Conference and Exhibition. Messe Frankfurt and Congress Center Frankfurt, Germany, 24. Sep 2012 - 28. Sep 2012. In: 27th European Photovoltaic Solar Energy Conference and Exhibition. 27th European Photovoltaic Solar Energy Conference and Exhibition. Messe Frankfurt and Congress Center Frankfurt, Germany, 24. Sep 2012 - 28. Sep 2012. München:WIP Renewable Energies, pp. 879-882

@inproceedings{Sommer2012Elect-22798, title={Electrical, optical and structural investigation of low-temperature PECV-deposited hydrogenated amphorous silicon-oxynitride films for surface passivation of crystalline silicon solar cells}, year={2012}, doi={10.4229/27thEUPVSEC2012-2DO.8.2}, address={München}, publisher={WIP Renewable Energies}, booktitle={27th European Photovoltaic Solar Energy Conference and Exhibition}, pages={879--882}, author={Sommer, Daniel and Brinkmann, Nils and Micard, Gabriel and Hahn, Giso and Terheiden, Barbara} }

Amorphous silicon oxynitride (a-SiOxNy:H) films, which are deposited by plasma enhanced chemical vapor deposition (PECVD) at low temperatures (Tdep < 200°C), are investigated in terms of their electrical, optical, and structural properties. The purpose is to develop a passivation layer for crystalline silicon solar cells, which is comparable to amorphous silicon (a-Si:H) films in terms of manufacturing process and passivation quality, but superior to a-Si:H films in terms of parasitic absorption. In comparison to a-Si:H films, amorphous silicon oxynitride films suffer less from parasitic absorption over the whole wavelength range due to their higher optical band gap (Eg). The widening of the optical band gap is realized by the incorporation of oxygen and nitrogen atoms in the amorphous network. Ongoing with the incorporation of oxygen and nitrogen atoms is the possibility to tune the refractive index (n) in a certain range, which turns amorphous silicon oxynitride into a very interesting material for solar cell applications, in particular for heterojunction solar cells and multilayer anti reflection coatings. 27th European Photovoltaic Solar Energy Conference and Exhibition : Messe Frankfurt and Congress Center Frankfurt, Germany ; conference 24 - 28 September 2012, exhibition 25 - 28 September 2012 ; proceedings / EU PVSEC 2012. - München : WIP-Renewable Energies, 2012. - S. 879-882. - ISBN 3-936338-28-0 Terheiden, Barbara Terheiden, Barbara Micard, Gabriel 2013-05-31T15:24:46Z eng deposit-license Hahn, Giso 2012 Sommer, Daniel Hahn, Giso Electrical, optical and structural investigation of low-temperature PECV-deposited hydrogenated amphorous silicon-oxynitride films for surface passivation of crystalline silicon solar cells Sommer, Daniel Micard, Gabriel Brinkmann, Nils Brinkmann, Nils 2013-05-31T15:24:46Z

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