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Light induced curing (LIC) of passivation layers deposited on native silicon oxide

Light induced curing (LIC) of passivation layers deposited on native silicon oxide

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JOOS, Sebastian, Axel HERGUTH, Uwe HESS, Jan EBSER, Sven SEREN, Barbara TERHEIDEN, Giso HAHN, 2012. Light induced curing (LIC) of passivation layers deposited on native silicon oxide. In: Energy Procedia. 27, pp. 349-354. ISSN 1876-6102. eISSN 1876-6102

@article{Joos2012Light-22754, title={Light induced curing (LIC) of passivation layers deposited on native silicon oxide}, year={2012}, doi={10.1016/j.egypro.2012.07.075}, volume={27}, issn={1876-6102}, journal={Energy Procedia}, pages={349--354}, author={Joos, Sebastian and Herguth, Axel and Heß, Uwe and Ebser, Jan and Seren, Sven and Terheiden, Barbara and Hahn, Giso} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/22754"> <dc:creator>Herguth, Axel</dc:creator> <dc:contributor>Joos, Sebastian</dc:contributor> <dc:language>eng</dc:language> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-05-27T11:02:09Z</dc:date> <dc:creator>Joos, Sebastian</dc:creator> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:contributor>Ebser, Jan</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/22754"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-05-27T11:02:09Z</dcterms:available> <dc:creator>Seren, Sven</dc:creator> <dc:creator>Hahn, Giso</dc:creator> <dc:contributor>Seren, Sven</dc:contributor> <dc:contributor>Heß, Uwe</dc:contributor> <dc:contributor>Terheiden, Barbara</dc:contributor> <dc:creator>Terheiden, Barbara</dc:creator> <dc:creator>Ebser, Jan</dc:creator> <dc:contributor>Hahn, Giso</dc:contributor> <dc:contributor>Herguth, Axel</dc:contributor> <dcterms:title>Light induced curing (LIC) of passivation layers deposited on native silicon oxide</dcterms:title> <dcterms:bibliographicCitation>Energy Procedia ; 27 (2012). - S. 349-354</dcterms:bibliographicCitation> <dcterms:abstract xml:lang="eng">This work presents a novel insight to the aspects of silicon surface passivation and the influence of thin intermediate layers generated by chemically grown silicon oxides. Strong light induced effects on passivation properties are investigated. After exposure to light (0.25 suns) for about 60 s, samples based on a PECVD layer system consisting of SiNx and SiO2 deposited on crystalline silicon with native silicon oxides show an improvement of more than 100% in minority carrier lifetime. These improvements are stable over months and lead to effective surface recombination velocities as low as 10 cm/s on chemically polished p-type FZ wafers. With the use of different light sources, corona charging and annealing experiments the effect is investigated in detail. Finally, the effect is proposed to be a photo induced curing process of defects in the Si/SiO2 interface with the incorporation of hydrogen.</dcterms:abstract> <dcterms:issued>2012</dcterms:issued> <dc:rights>deposit-license</dc:rights> <dc:creator>Heß, Uwe</dc:creator> </rdf:Description> </rdf:RDF>

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