A study of various methods for the analysis of the phophosilicate glass layer

Zitieren

Dateien zu dieser Ressource

Dateien Größe Format Anzeige

Zu diesem Dokument gibt es keine Dateien.

STEYER, Michael, Amir DASTGHEIB-SHIRAZI, Hannes WAGNER, Gabriel MICARD, Pietro ALTERMATT, Giso HAHN, 2012. A study of various methods for the analysis of the phophosilicate glass layer. 27th European Photovoltaic Solar Energy Conference and Exhibition. Messe Frankfurt and Congress Center Frankfurt, Germany, 24. Sep 2012 - 28. Sep 2012. In: 27th European Photovoltaic Solar Energy Conference and Exhibition. 27th European Photovoltaic Solar Energy Conference and Exhibition. Messe Frankfurt and Congress Center Frankfurt, Germany, 24. Sep 2012 - 28. Sep 2012. München:WIP Renewable Energies, pp. 1325-1328. ISBN 3-936338-28-0

@inproceedings{Steyer2012study-22522, title={A study of various methods for the analysis of the phophosilicate glass layer}, year={2012}, doi={10.4229/27thEUPVSEC2012-2BV.5.1}, isbn={3-936338-28-0}, address={München}, publisher={WIP Renewable Energies}, booktitle={27th European Photovoltaic Solar Energy Conference and Exhibition}, pages={1325--1328}, author={Steyer, Michael and Dastgheib-Shirazi, Amir and Wagner, Hannes and Micard, Gabriel and Altermatt, Pietro and Hahn, Giso}, note={DVD-Ausgabe} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/22522"> <dc:contributor>Micard, Gabriel</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-03-28T15:31:35Z</dc:date> <dc:contributor>Steyer, Michael</dc:contributor> <dc:contributor>Wagner, Hannes</dc:contributor> <dc:contributor>Altermatt, Pietro</dc:contributor> <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor> <dcterms:abstract xml:lang="eng">The understanding and therefore the optimization of n+-emitter formation in crystalline silicon using POCl3-diffusion requires a more detailed knowledge of the dopant source: the PhosphoSilicate Glass (PSG) layer. The growth of PSG during the phosphorus diffusion process depends on several process parameters, such as temperature, duration, POCl3-N2 and O2 gas flows. In this work, we compare the uncertainties in various methods for PSG thickness measurements: by an Atomic Force Microscope (AFM), a profilometer, a Scanning Electron Microscope (SEM) and a spectroscopic ellipsometer. We then quantify how the PSG thickness is influenced by the process parameters. We also measure the total amount of phosphorus (P-dose) in the PSG layer using Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES) and quantify the P dose in dependence of the process parameters as well. Finally, by combining both the measured PSG thickness and the dose, we successfully determine a lower limit for the phosphorus concentration in the PSG layer. It is, depending on the process parameters, between 7x1021 cm-3 and 1.2x1022 cm-3, which is a remarkably narrow range. These results will help to improve the phosphorus diffusion model by considering both the PSG growth behavior and PSG composition, and so will facilitate the development of a predictive model for the POCl3 diffusions process.</dcterms:abstract> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-03-28T15:31:35Z</dcterms:available> <dc:creator>Wagner, Hannes</dc:creator> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dcterms:bibliographicCitation>27th European Photovoltaic Solar Energy Conference and Exhibition : Messe Frankfurt and Congress Center Frankfurt, Germany ; conference 24 - 28 September 2012, exhibition 25 - 28 September 2012 ; proceedings / EU PVSEC 2012. - München : WIP-Renewable Energies, 2012. - S. 1325-1328. - ISBN 3-936338-28-0</dcterms:bibliographicCitation> <dcterms:issued>2012</dcterms:issued> <dc:creator>Hahn, Giso</dc:creator> <dc:creator>Altermatt, Pietro</dc:creator> <dc:rights>deposit-license</dc:rights> <dc:creator>Steyer, Michael</dc:creator> <dc:creator>Dastgheib-Shirazi, Amir</dc:creator> <dc:creator>Micard, Gabriel</dc:creator> <dc:language>eng</dc:language> <dcterms:title>A study of various methods for the analysis of the phophosilicate glass layer</dcterms:title> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/22522"/> <dc:contributor>Hahn, Giso</dc:contributor> </rdf:Description> </rdf:RDF>

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto