A study of various methods for the analysis of the phophosilicate glass layer


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STEYER, Michael, Amir DASTGHEIB-SHIRAZI, Hannes WAGNER, Gabriel MICARD, Pietro ALTERMATT, Giso HAHN, 2012. A study of various methods for the analysis of the phophosilicate glass layer. 27th European Photovoltaic Solar Energy Conference and Exhibition. Messe Frankfurt and Congress Center Frankfurt, Germany, 24. Sep 2012 - 28. Sep 2012. In: 27th European Photovoltaic Solar Energy Conference and Exhibition. München:WIP Renewable Energies, pp. 1325-1328. ISBN 3-936338-28-0. Available under: doi: 10.4229/27thEUPVSEC2012-2BV.5.1

@inproceedings{Steyer2012study-22522, title={A study of various methods for the analysis of the phophosilicate glass layer}, year={2012}, doi={10.4229/27thEUPVSEC2012-2BV.5.1}, isbn={3-936338-28-0}, address={München}, publisher={WIP Renewable Energies}, booktitle={27th European Photovoltaic Solar Energy Conference and Exhibition}, pages={1325--1328}, author={Steyer, Michael and Dastgheib-Shirazi, Amir and Wagner, Hannes and Micard, Gabriel and Altermatt, Pietro and Hahn, Giso}, note={DVD-Ausgabe} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/22522"> <dc:contributor>Micard, Gabriel</dc:contributor> <dcterms:rights rdf:resource="https://kops.uni-konstanz.de/page/termsofuse"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-03-28T15:31:35Z</dc:date> <dc:contributor>Steyer, Michael</dc:contributor> <dc:contributor>Wagner, Hannes</dc:contributor> <dc:contributor>Altermatt, Pietro</dc:contributor> <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-03-28T15:31:35Z</dcterms:available> <dcterms:abstract xml:lang="eng">The understanding and therefore the optimization of n+-emitter formation in crystalline silicon using POCl3-diffusion requires a more detailed knowledge of the dopant source: the PhosphoSilicate Glass (PSG) layer. The growth of PSG during the phosphorus diffusion process depends on several process parameters, such as temperature, duration, POCl3-N2 and O2 gas flows. In this work, we compare the uncertainties in various methods for PSG thickness measurements: by an Atomic Force Microscope (AFM), a profilometer, a Scanning Electron Microscope (SEM) and a spectroscopic ellipsometer. We then quantify how the PSG thickness is influenced by the process parameters. We also measure the total amount of phosphorus (P-dose) in the PSG layer using Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES) and quantify the P dose in dependence of the process parameters as well. Finally, by combining both the measured PSG thickness and the dose, we successfully determine a lower limit for the phosphorus concentration in the PSG layer. It is, depending on the process parameters, between 7x1021 cm-3 and 1.2x1022 cm-3, which is a remarkably narrow range. These results will help to improve the phosphorus diffusion model by considering both the PSG growth behavior and PSG composition, and so will facilitate the development of a predictive model for the POCl3 diffusions process.</dcterms:abstract> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:creator>Wagner, Hannes</dc:creator> <dcterms:bibliographicCitation>27th European Photovoltaic Solar Energy Conference and Exhibition : Messe Frankfurt and Congress Center Frankfurt, Germany ; conference 24 - 28 September 2012, exhibition 25 - 28 September 2012 ; proceedings / EU PVSEC 2012. - München : WIP-Renewable Energies, 2012. - S. 1325-1328. - ISBN 3-936338-28-0</dcterms:bibliographicCitation> <dcterms:issued>2012</dcterms:issued> <dc:creator>Hahn, Giso</dc:creator> <dc:creator>Altermatt, Pietro</dc:creator> <dc:rights>terms-of-use</dc:rights> <dc:creator>Steyer, Michael</dc:creator> <dc:creator>Dastgheib-Shirazi, Amir</dc:creator> <dc:creator>Micard, Gabriel</dc:creator> <dc:language>eng</dc:language> <dcterms:title>A study of various methods for the analysis of the phophosilicate glass layer</dcterms:title> <dc:contributor>Hahn, Giso</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/22522"/> </rdf:Description> </rdf:RDF>

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