Review on screen printed metallization on p-type silicon


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RIEGEL, Stefanie, Florian MUTTER, Thomas LAUERMANN, Barbara TERHEIDEN, Giso HAHN, 2012. Review on screen printed metallization on p-type silicon. In: Energy Procedia. 21, pp. 14-23. ISSN 1876-6102. eISSN 1876-6102

@article{Riegel2012Revie-21722, title={Review on screen printed metallization on p-type silicon}, year={2012}, doi={10.1016/j.egypro.2012.05.003}, volume={21}, issn={1876-6102}, journal={Energy Procedia}, pages={14--23}, author={Riegel, Stefanie and Mutter, Florian and Lauermann, Thomas and Terheiden, Barbara and Hahn, Giso} }

eng 2013-02-25T16:22:24Z deposit-license 2012 Terheiden, Barbara Riegel, Stefanie Lauermann, Thomas Lauermann, Thomas 2013-02-25T16:22:24Z Review on screen printed metallization on p-type silicon Riegel, Stefanie Terheiden, Barbara Hahn, Giso Energy Procedia ; 21 (2012). - S. 14–23 Mutter, Florian Hahn, Giso In this contribution we investigate the influence of the doping element on the contact formation to p+-type Si. Contacting B doped layers with Ag thick film paste leads to very few Ag crystallites at the contact interface and results in poor contact resistances [1], [2] and [3]. Using Ag/Al thick film paste for contact formation, the contact is not only formed by Ag crystallites, but by diversely shaped Ag/Al contact spots and the contact resistance is reduced by more than one order of magnitude [2]. Al melting at the Si wafer surface forms Al doped rectangles on the Si wafer where the growth of Ag/Al/Pb spikes is enhanced.<br /><br />When contacting Al doped layers with Ag thick film paste a larger number of Ag crystallites is observed than for B doped layers. If the contact is formed with Ag/Al paste the number of Al-rich rectangles is enhanced and we detect higher doped areas under the contact spots. The contacts detected have an ellipsoidal, pyramidal or “L-formed” shape. We conclude that not only the acceptor impurity concentration under the contact area is crucial for the contact formation, but also the properties of the specific acceptor present. Mutter, Florian

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