Review on screen printed metallization on p-type silicon

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:d1558364013f4bbced445ca369ccc040

RIEGEL, Stefanie, Florian MUTTER, Thomas LAUERMANN, Barbara TERHEIDEN, Giso HAHN, 2012. Review on screen printed metallization on p-type silicon. In: Energy Procedia. 21, pp. 14-23. ISSN 1876-6102. eISSN 1876-6102

@article{Riegel2012Revie-21722, title={Review on screen printed metallization on p-type silicon}, year={2012}, doi={10.1016/j.egypro.2012.05.003}, volume={21}, issn={1876-6102}, journal={Energy Procedia}, pages={14--23}, author={Riegel, Stefanie and Mutter, Florian and Lauermann, Thomas and Terheiden, Barbara and Hahn, Giso} }

eng 2013-02-25T16:22:24Z deposit-license 2012 Terheiden, Barbara Riegel, Stefanie Lauermann, Thomas Lauermann, Thomas 2013-02-25T16:22:24Z Review on screen printed metallization on p-type silicon Riegel, Stefanie Terheiden, Barbara Hahn, Giso Energy Procedia ; 21 (2012). - S. 14–23 Mutter, Florian Hahn, Giso In this contribution we investigate the influence of the doping element on the contact formation to p+-type Si. Contacting B doped layers with Ag thick film paste leads to very few Ag crystallites at the contact interface and results in poor contact resistances [1], [2] and [3]. Using Ag/Al thick film paste for contact formation, the contact is not only formed by Ag crystallites, but by diversely shaped Ag/Al contact spots and the contact resistance is reduced by more than one order of magnitude [2]. Al melting at the Si wafer surface forms Al doped rectangles on the Si wafer where the growth of Ag/Al/Pb spikes is enhanced.<br /><br />When contacting Al doped layers with Ag thick film paste a larger number of Ag crystallites is observed than for B doped layers. If the contact is formed with Ag/Al paste the number of Al-rich rectangles is enhanced and we detect higher doped areas under the contact spots. The contacts detected have an ellipsoidal, pyramidal or “L-formed” shape. We conclude that not only the acceptor impurity concentration under the contact area is crucial for the contact formation, but also the properties of the specific acceptor present. Mutter, Florian

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

Riegel_217228_flat.pdf 169

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto