Silicon diffusion in aluminum for rear passivated solar cells
Aufgrund von Vorbereitungen auf eine neue Version von KOPS, können derzeit keine Publikationen eingereicht werden. (Due to preparations for a new version of KOPS, no publications can be submitted currently.)
| Type of Publication: | Journal article |
| Author: | Urrejola, Elias; Peter, Kristian; Plagwitz, Heiko; Schubert, Gunnar |
| Year of publication: | 2011 |
| Published in: | Applied Physics Letters ; 98 (2011), 15. - 153508. - ISSN 0003-6951 |
| DOI (citable link): | https://dx.doi.org/10.1063/1.3579541 |
| Summary: |
We show that the lateral spread of silicon in a screen-printed aluminum layer increases by (1.50 +- 0.06) µm/°C, when increasing the peak firing temperature within an industrially applicable range. In this way, the maximum spread limit of diffused silicon in aluminum is predictable and does not depend on the contact area size but on the firing temperature. Therefore, the geometry of the rear side pattern can influence not only series resistance losses within the solar cell but the process of contact formation itself. In addition, too fast cooling lead to Kirkendall void formations instead of an eutectic layer
|
| Subject (DDC): | 530 Physics |
| Keywords: | solar cells, silicon alloys, aluminum, aluminium, alloys, compounds, gravity, sintering, contact resistance, chemical interdiffusion, firing (materials), dielectric thin films, passivation, protective coating, scanning electron microscopy, back-surface-field, voids (solid), kirkendall effect |
Cite This
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
|
There are no files associated with this item. |
|||
URREJOLA, Elias, Kristian PETER, Heiko PLAGWITZ, Gunnar SCHUBERT, 2011. Silicon diffusion in aluminum for rear passivated solar cells. In: Applied Physics Letters. 98(15), 153508. ISSN 0003-6951. Available under: doi: 10.1063/1.3579541
@article{Urrejola2011Silic-19492, title={Silicon diffusion in aluminum for rear passivated solar cells}, year={2011}, doi={10.1063/1.3579541}, number={15}, volume={98}, issn={0003-6951}, journal={Applied Physics Letters}, author={Urrejola, Elias and Peter, Kristian and Plagwitz, Heiko and Schubert, Gunnar}, note={Article Number: 153508} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/19492"> <dc:contributor>Peter, Kristian</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/29"/> <dcterms:bibliographicCitation>Publ. in: Applied Physics Letters ; 98 (2011), 15. - 153508</dcterms:bibliographicCitation> <dc:creator>Urrejola, Elias</dc:creator> <dc:rights>terms-of-use</dc:rights> <dc:creator>Plagwitz, Heiko</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/19492"/> <dc:creator>Schubert, Gunnar</dc:creator> <dc:contributor>Plagwitz, Heiko</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-14T20:02:11Z</dcterms:available> <dcterms:title>Silicon diffusion in aluminum for rear passivated solar cells</dcterms:title> <dc:contributor>Urrejola, Elias</dc:contributor> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/29"/> <dc:creator>Peter, Kristian</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-14T20:02:11Z</dc:date> <dcterms:issued>2011</dcterms:issued> <dcterms:abstract xml:lang="eng">We show that the lateral spread of silicon in a screen-printed aluminum layer increases by (1.50 +- 0.06) µm/°C, when increasing the peak firing temperature within an industrially applicable range. In this way, the maximum spread limit of diffused silicon in aluminum is predictable and does not depend on the contact area size but on the firing temperature. Therefore, the geometry of the rear side pattern can influence not only series resistance losses within the solar cell but the process of contact formation itself. In addition, too fast cooling lead to Kirkendall void formations instead of an eutectic layer</dcterms:abstract> <dc:contributor>Schubert, Gunnar</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:language>eng</dc:language> </rdf:Description> </rdf:RDF>
This item appears in the following Collection(s)
Search KOPS
Browse
My Account
