Silicon diffusion in aluminum for rear passivated solar cells

Publikationstyp: Zeitschriftenartikel
Autor/innen: Urrejola, Elias; Peter, Kristian; Plagwitz, Heiko; Schubert, Gunnar
Erscheinungsjahr: 2011
Erschienen in: Applied Physics Letters ; 98 (2011), 15. - 153508. - ISSN 0003-6951
DOI (zitierfähiger Link): https://dx.doi.org/10.1063/1.3579541
Zusammenfassung:
We show that the lateral spread of silicon in a screen-printed aluminum layer increases by (1.50 +- 0.06) µm/°C, when increasing the peak firing temperature within an industrially applicable range. In this way, the maximum spread limit of diffused silicon in aluminum is predictable and does not depend on the contact area size but on the firing temperature. Therefore, the geometry of the rear side pattern can influence not only series resistance losses within the solar cell but the process of contact formation itself. In addition, too fast cooling lead to Kirkendall void formations instead of an eutectic layer
Fachgebiet (DDC): 530 Physik
Schlagwörter: solar cells, silicon alloys, aluminum, aluminium, alloys, compounds, gravity, sintering, contact resistance, chemical interdiffusion, firing (materials), dielectric thin films, passivation, protective coating, scanning electron microscopy, back-surface-field, voids (solid), kirkendall effect

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URREJOLA, Elias, Kristian PETER, Heiko PLAGWITZ, Gunnar SCHUBERT, 2011. Silicon diffusion in aluminum for rear passivated solar cells. In: Applied Physics Letters. 98(15), 153508. ISSN 0003-6951. Available under: doi: 10.1063/1.3579541

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