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Type of Publication: | Journal article |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-194460 |
Author: | Ashari, Mohamed; Rees, D.G.; Kono, Kimitoshi; Scheer, Elke; Leiderer, Paul |
Year of publication: | 2012 |
Published in: | Journal of Low Temperature Physics ; 167 (2012), 1-2. - pp. 15-25. - ISSN 0022-2291 |
DOI (citable link): | https://dx.doi.org/10.1007/s10909-012-0604-9 |
Summary: |
We present investigations of surface state electrons on liquid helium films in confined geometry, using a suitable substrate structure microfabricated on a silicon wafer, similar to a Field Effect Transistor (FET). The sample has a source and drain region, separated by a gate structure, which consists of two gold electrodes with a narrow gap (channel) through which the transport of the surface state electrons takes place. The sample is illuminated to provide a sufficient number of free carriers in the silicon substrate, such that a well-defined potential distribution is achieved. The eventual goal of these experiments is to study the electron transport through a narrow channel in the various states of the phase diagram of the 2D electron system. In the present work we focus on storing the electrons in the source area of the FET, and investigate the spatial distribution of these electrons. It is shown that under the influence of a potential gradient in the silicon substrate the electrons accumulate in front of the potential barrier of the gate. The electron distribution, governed by Coulomb repulsion and by the substrate potential, is determined experimentally. The result is found to be in good agreement with a parallel-plate capacitor model of the system, developed with the aid of a finite element calculation of the surface potential profile of the device.
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Subject (DDC): | 530 Physics |
Keywords: | Helium field effect transistor, Surface electron, Helium film, Electron storage |
Link to License: | In Copyright |
Bibliography of Konstanz: | Yes |
ASHARI, Mohamed, D.G. REES, Kimitoshi KONO, Elke SCHEER, Paul LEIDERER, 2012. The Helium Field Effect Transistor (I) : Storing surface state electrons on helium films. In: Journal of Low Temperature Physics. 167(1-2), pp. 15-25. ISSN 0022-2291. Available under: doi: 10.1007/s10909-012-0604-9
@article{Ashari2012Heliu-19446, title={The Helium Field Effect Transistor (I) : Storing surface state electrons on helium films}, year={2012}, doi={10.1007/s10909-012-0604-9}, number={1-2}, volume={167}, issn={0022-2291}, journal={Journal of Low Temperature Physics}, pages={15--25}, author={Ashari, Mohamed and Rees, D.G. and Kono, Kimitoshi and Scheer, Elke and Leiderer, Paul} }
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