KOPS - The Institutional Repository of the University of Konstanz

High Efficiency Industrial PERC Solar Cells with all PECVD-Based Rear Surface Passivation

High Efficiency Industrial PERC Solar Cells with all PECVD-Based Rear Surface Passivation

Cite This

Files in this item

Files Size Format View

There are no files associated with this item.

URREJOLA, Elias, Roman PETRES, Joachim GLATZ-REICHENBACH, Kristian PETER, Eckard WEFRINGHAUS, Heiko PLAGWITZ, Gunnar SCHUBERT, 2011. High Efficiency Industrial PERC Solar Cells with all PECVD-Based Rear Surface Passivation. 26th European Photovoltaic Solar Energy Conference and Exhibition. CCH Congress Centre and International Fair, Hamburg, Germany, Sep 5, 2011 - Sep 9, 2011. In: OSSENBRINK, H., ed. and others. 26th European Photovoltaic Solar Energy Conference and Exhibition : the most inspiring platform for the global PV solar sector. München:WIP Renewable Energies, pp. 2233-2236. ISBN 3-936338-27-2. Available under: doi: 10.4229/26thEUPVSEC2011-2CV.4.34

@inproceedings{Urrejola2011Effic-19444, title={High Efficiency Industrial PERC Solar Cells with all PECVD-Based Rear Surface Passivation}, year={2011}, doi={10.4229/26thEUPVSEC2011-2CV.4.34}, isbn={3-936338-27-2}, address={München}, publisher={WIP Renewable Energies}, booktitle={26th European Photovoltaic Solar Energy Conference and Exhibition : the most inspiring platform for the global PV solar sector}, pages={2233--2236}, editor={Ossenbrink, H.}, author={Urrejola, Elias and Petres, Roman and Glatz-Reichenbach, Joachim and Peter, Kristian and Wefringhaus, Eckard and Plagwitz, Heiko and Schubert, Gunnar} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/19444"> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-13T07:48:11Z</dc:date> <dcterms:issued>2011</dcterms:issued> <dc:rights>terms-of-use</dc:rights> <dc:contributor>Schubert, Gunnar</dc:contributor> <dc:creator>Schubert, Gunnar</dc:creator> <dc:creator>Plagwitz, Heiko</dc:creator> <dc:contributor>Petres, Roman</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/29"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-13T07:48:11Z</dcterms:available> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:language>eng</dc:language> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/19444"/> <dc:contributor>Glatz-Reichenbach, Joachim</dc:contributor> <dc:contributor>Plagwitz, Heiko</dc:contributor> <dc:creator>Wefringhaus, Eckard</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Peter, Kristian</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:creator>Glatz-Reichenbach, Joachim</dc:creator> <dc:creator>Petres, Roman</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/29"/> <dc:contributor>Wefringhaus, Eckard</dc:contributor> <dc:contributor>Peter, Kristian</dc:contributor> <dc:creator>Urrejola, Elias</dc:creator> <dcterms:abstract xml:lang="eng">In the photovoltaic industry both the reduction of the silicon material thickness and the increase of the solar cells efficiency are critical topics for cost reduction. This work presents an innovative and industrially applicable Si-based passivation layer deposited by PECVD, with high passivation quality for the lowly doped p-type rear surface of PERC solar cells. Applying only high-throughput PECVD processes for surface passivation, the PERC process as presented in this work, might be completely feasible for industrial applications. We achieved efficiencies of 19% on monocrystalline p-type Cz-Si and above 17.2% on multicrystalline p-type wafers. The processing of the wafers is developed at a standard industrial level, and no special equipment or processing was required for achieving this efficiencies.</dcterms:abstract> <dcterms:bibliographicCitation>Publ. in: Proceedings / 26th European Photovoltaic Solar Energy Conference and Exhibition : the most inspiring platform for the global PV solar sector ; CCH Congress Centre and International Fair, Hamburg, Germany, Conference 5 - 9 September 2011, exhibition 5 - 8 September 2011 / ed. by H. Ossenbrink ... - München : WIP Renewable Energies, 2011. - pp. 2233-2236. - ISBN 3-936338-27-2</dcterms:bibliographicCitation> <dc:contributor>Urrejola, Elias</dc:contributor> <dcterms:title>High Efficiency Industrial PERC Solar Cells with all PECVD-Based Rear Surface Passivation</dcterms:title> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> </rdf:Description> </rdf:RDF>

This item appears in the following Collection(s)

Search KOPS


Browse

My Account