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Patterning poly(3-Hexylthiophene) in the sub-50-nm region by nanoimprint lithography

Patterning poly(3-Hexylthiophene) in the sub-50-nm region by nanoimprint lithography

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SCARPA, Giuseppe, Alaa ABDELLAH, Armin EXNER, Stefan HARRER, Guillermo Penso BLANCO, Wolfgang WIEDEMANN, Lukas SCHMIDT-MENDE, Paolo LUGLI, 2011. Patterning poly(3-Hexylthiophene) in the sub-50-nm region by nanoimprint lithography. In: IEEE Transactions on Nanotechnology. 10(3), pp. 482-488. ISSN 1536-125X

@article{Scarpa2011Patte-19192, title={Patterning poly(3-Hexylthiophene) in the sub-50-nm region by nanoimprint lithography}, year={2011}, doi={10.1109/TNANO.2010.2048433}, number={3}, volume={10}, issn={1536-125X}, journal={IEEE Transactions on Nanotechnology}, pages={482--488}, author={Scarpa, Giuseppe and Abdellah, Alaa and Exner, Armin and Harrer, Stefan and Blanco, Guillermo Penso and Wiedemann, Wolfgang and Schmidt-Mende, Lukas and Lugli, Paolo} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/19192"> <dc:contributor>Schmidt-Mende, Lukas</dc:contributor> <dc:rights>deposit-license</dc:rights> <dc:contributor>Scarpa, Giuseppe</dc:contributor> <dc:creator>Scarpa, Giuseppe</dc:creator> <dc:creator>Schmidt-Mende, Lukas</dc:creator> <dcterms:abstract xml:lang="eng">We use thermal and room temperature nanoimprint lithography (NIL) for directly patterning the photoactive polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) in the sub-50-nm region. Different types of molds were used to directly imprint the desired structures into P3HT thin films. Good pattern transfer is achieved independent of the presence of other underlying polymer layers or the type of substrate incorporated. Further, we discuss the future application of this technology to the fabrication of ordered heterojuction organic photovoltaic devices and demonstrate that the NIL process involved does not damage the polymer or alter its chemical or electrical properties.</dcterms:abstract> <dc:creator>Lugli, Paolo</dc:creator> <dc:creator>Harrer, Stefan</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/19192"/> <dc:creator>Exner, Armin</dc:creator> <dc:contributor>Lugli, Paolo</dc:contributor> <dc:creator>Wiedemann, Wolfgang</dc:creator> <dc:creator>Abdellah, Alaa</dc:creator> <dc:contributor>Wiedemann, Wolfgang</dc:contributor> <dc:language>eng</dc:language> <dc:contributor>Exner, Armin</dc:contributor> <dcterms:bibliographicCitation>IEEE transactions on nanotechnology ; 10 (2011), 3. - S. 482-488</dcterms:bibliographicCitation> <dcterms:issued>2011</dcterms:issued> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:contributor>Blanco, Guillermo Penso</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-05-03T05:56:35Z</dc:date> <dc:contributor>Harrer, Stefan</dc:contributor> <dc:contributor>Abdellah, Alaa</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-05-03T05:56:35Z</dcterms:available> <dc:creator>Blanco, Guillermo Penso</dc:creator> <dcterms:title>Patterning poly(3-Hexylthiophene) in the sub-50-nm region by nanoimprint lithography</dcterms:title> </rdf:Description> </rdf:RDF>

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