KOPS - Das Institutionelle Repositorium der Universität Konstanz

Influence of diffusion parameters on electronic quality of multicrystalline silicon

Influence of diffusion parameters on electronic quality of multicrystalline silicon

Zitieren

Dateien zu dieser Ressource

Dateien Größe Format Anzeige

Zu diesem Dokument gibt es keine Dateien.

GINDNER, Sarah, Amir DASTGHEIB-SHIRAZI, Johannes JUNGE, Sven SEREN, Giso HAHN, 2011. Influence of diffusion parameters on electronic quality of multicrystalline silicon. 26th European Photovoltaic Solar Energy Conference and Exhibition. CCH Congress Centre and International Fair, Hamburg, Germany, 5. Sep 2011 - 9. Sep 2011. In: OSSENBRINK, H., ed. and others. Proceedings / 26th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC). 26th European Photovoltaic Solar Energy Conference and Exhibition. CCH Congress Centre and International Fair, Hamburg, Germany, 5. Sep 2011 - 9. Sep 2011. Munich, Germany:WIP-Renewable Energies, pp. 1313-1318. ISBN 3-936338-27-2. Available under: doi: 10.4229/26thEUPVSEC2011-2BV.1.34

@inproceedings{Gindner2011Influ-18501, title={Influence of diffusion parameters on electronic quality of multicrystalline silicon}, year={2011}, doi={10.4229/26thEUPVSEC2011-2BV.1.34}, isbn={3-936338-27-2}, address={Munich, Germany}, publisher={WIP-Renewable Energies}, booktitle={Proceedings / 26th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC)}, pages={1313--1318}, editor={Ossenbrink, H.}, author={Gindner, Sarah and Dastgheib-Shirazi, Amir and Junge, Johannes and Seren, Sven and Hahn, Giso} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/18501"> <dc:creator>Dastgheib-Shirazi, Amir</dc:creator> <dcterms:abstract xml:lang="eng">The presented work deals with phosphorus diffusion gettering of mc material. A significant improvement of electronic material quality after diffusion is reported. Additionally to POCle diffusion some wafers undergo deposition and firing of PECVD SiNx to study hydrogen passivation and to allow for a better comparability to solar cell results. Spatially resolved μPCD lifetime measurements provide insight into how various defect types react to different diffusion processes. 2x2 cm2 solar cells produced in a photolithography based cell process allow detailed analysis of different defect regions. The interstitial iron content is lowered under the detection limit after POCl3-diffusion. Both lifetime measurements and cell results indentify the diffusion process with low unloading temperature as the optimum one among processes without additional holding step at unloading temperature. Comparing processes with holding time at unloading temperature, the reference diffusion with higher unloading temperature turns out to be the best one.</dcterms:abstract> <dc:contributor>Gindner, Sarah</dc:contributor> <dc:language>eng</dc:language> <dc:creator>Gindner, Sarah</dc:creator> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:rights>deposit-license</dc:rights> <dcterms:bibliographicCitation>Publ. in: Proceedings / 26th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) : CCH Congress Centre and International Fair, Hamburg, Germany, Conference 5 - 9 September 2011, exhibition 5 - 8 September 2011 / ed. by H. Ossenbrink ... - München : WIP Renewable Energies, 2011. - S. 1313-1318. - ISBN: 3-936338-27-2 [DVD-ROM]</dcterms:bibliographicCitation> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:creator>Seren, Sven</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/18501"/> <dcterms:issued>2011</dcterms:issued> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-02-29T08:46:38Z</dc:date> <dc:contributor>Seren, Sven</dc:contributor> <dc:contributor>Hahn, Giso</dc:contributor> <dc:creator>Hahn, Giso</dc:creator> <dcterms:title>Influence of diffusion parameters on electronic quality of multicrystalline silicon</dcterms:title> <dc:creator>Junge, Johannes</dc:creator> <dc:contributor>Junge, Johannes</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-02-29T08:46:38Z</dcterms:available> <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> </rdf:Description> </rdf:RDF>

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto