Effects of disorder on electron spin dynamics in a semiconductor quantum well


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CHEN, Zhigang, Sam G. CARTER, Rudolf BRATSCHITSCH, Philip DAWSON, Steven T. CUNDIFF, 2007. Effects of disorder on electron spin dynamics in a semiconductor quantum well. In: Nature Physics. 3(4), pp. 265-269. ISSN 1745-2473

@article{Chen2007Effec-17497, title={Effects of disorder on electron spin dynamics in a semiconductor quantum well}, year={2007}, doi={10.1038/nphys537}, number={4}, volume={3}, issn={1745-2473}, journal={Nature Physics}, pages={265--269}, author={Chen, Zhigang and Carter, Sam G. and Bratschitsch, Rudolf and Dawson, Philip and Cundiff, Steven T.} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/17497"> <dc:language>eng</dc:language> <dcterms:abstract xml:lang="eng">Using the spin of the electron to carry information, instead of or in addition to its charge, could provide advances in the capabilities of microelectronics. Successful implementation of spin-based electronics requires preservation of the electron spin coherence. In n-doped semiconductors, long spin-coherence times have been observed, with a maximum at a 'magic' electron density. Here, we vary the density in a two-dimensional electron gas, and show that spin coherence is lost because of the interplay between localization by disorder and dynamical scattering. By measuring the electron Landé g-factor dependence on density, we determine the density of states (DOS), which characterizes the disorder potential. Using our knowledge of the DOS, a simple model estimates the temperature and excitation intensity dependence of the g factor, qualitatively agreeing with experiments. This agreement confirms the importance of disorder and provides predictive power for designing spin-based electronic devices.</dcterms:abstract> <dcterms:bibliographicCitation>Publ. in: Nature Physics ; 3 (2007), 4. - pp. 265-269</dcterms:bibliographicCitation> <dc:creator>Cundiff, Steven T.</dc:creator> <dc:contributor>Dawson, Philip</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-01-11T12:11:41Z</dc:date> <dc:rights>deposit-license</dc:rights> <dc:contributor>Chen, Zhigang</dc:contributor> <dc:creator>Chen, Zhigang</dc:creator> <dc:contributor>Bratschitsch, Rudolf</dc:contributor> <dcterms:title>Effects of disorder on electron spin dynamics in a semiconductor quantum well</dcterms:title> <dc:creator>Dawson, Philip</dc:creator> <dc:contributor>Cundiff, Steven T.</dc:contributor> <dcterms:issued>2007</dcterms:issued> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:contributor>Carter, Sam G.</dc:contributor> <dc:creator>Bratschitsch, Rudolf</dc:creator> <dc:creator>Carter, Sam G.</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-01-11T12:11:41Z</dcterms:available> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/17497"/> </rdf:Description> </rdf:RDF>

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