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A study of the surface morphology of silicon : Effect of parasitic emitter etching on the rear side performance of silicon solar cells

A study of the surface morphology of silicon : Effect of parasitic emitter etching on the rear side performance of silicon solar cells

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DASTGHEIB-SHIRAZI, Amir, Michael STEYER, Johannes JUNGE, Sarah GINDNER, Giso HAHN, 2010. A study of the surface morphology of silicon : Effect of parasitic emitter etching on the rear side performance of silicon solar cells. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, Sep 6, 2010 - Sep 10, 2010. In: DE SANTI, G.F., ed., H. OSSENBRINK, ed., P. HELM, ed.. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Munich, Germany:WIP-Renewable Energies, pp. 2107-2113. Available under: doi: 10.4229/25thEUPVSEC2010-2CV.3.10

@inproceedings{DastgheibShirazi2010study-16025, title={A study of the surface morphology of silicon : Effect of parasitic emitter etching on the rear side performance of silicon solar cells}, year={2010}, doi={10.4229/25thEUPVSEC2010-2CV.3.10}, address={Munich, Germany}, publisher={WIP-Renewable Energies}, booktitle={25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion}, pages={2107--2113}, editor={de Santi, G.F. and Ossenbrink, H. and Helm, P.}, author={Dastgheib-Shirazi, Amir and Steyer, Michael and Junge, Johannes and Gindner, Sarah and Hahn, Giso} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/16025"> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T09:53:39Z</dc:date> <dc:creator>Gindner, Sarah</dc:creator> <dcterms:bibliographicCitation>Publ. in: 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion : proceedings of the international conference held 6-10 September 2010, in Valencia, Spain / G.F. de Santi, H. Ossenbrink and P. Helm (eds.). Munich, Germany : WIP-Renewable Energies, 2010. pp. 2107-2113</dcterms:bibliographicCitation> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/16025"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:creator>Junge, Johannes</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Hahn, Giso</dc:contributor> <dc:contributor>Steyer, Michael</dc:contributor> <dc:language>eng</dc:language> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:abstract xml:lang="eng">Silicon solar cells with dielectric passivation layers need enhanced rear surface treatment. In this work we will introduce a novel masking and etching procedure whereby the parasitic emitter etching, the increase of the rear reflectance and finally the improvement of the rear surface passivation will be merged in only one step. Using adapted acidic etching solutions we can show a higher etch rate at pyramid peaks of textured rear sides. This selectivity of the etch rate will allow significant change of the surface morphology without increased material loss. This fact makes the application of thin solar cells more attractive. This novel method is transferred not only to screenprinted solar cell concepts with full area Al-BSF, but also to solar cells with dielectrically passivated rear sides. The rounding effect of the rear side texture with minimized abrasion leads to high rear side reflectance and increased surface passivation of dielectrically passivated solar cells. A significant gain of 0.5 mA/cm² of solar cells with an adapted rear side morphology confirms the mentioned advantages of this novel etching procedure with masking.</dcterms:abstract> <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor> <dcterms:title>A study of the surface morphology of silicon : Effect of parasitic emitter etching on the rear side performance of silicon solar cells</dcterms:title> <dc:rights>terms-of-use</dc:rights> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T09:53:39Z</dcterms:available> <dc:contributor>Gindner, Sarah</dc:contributor> <dc:contributor>Junge, Johannes</dc:contributor> <dc:creator>Dastgheib-Shirazi, Amir</dc:creator> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/16025/2/Dastgheib-Shirazi_160254.pdf"/> <dc:creator>Steyer, Michael</dc:creator> <dcterms:issued>2010</dcterms:issued> <dc:creator>Hahn, Giso</dc:creator> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/16025/2/Dastgheib-Shirazi_160254.pdf"/> <dcterms:rights rdf:resource="https://kops.uni-konstanz.de/page/termsofuse"/> </rdf:Description> </rdf:RDF>

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