@inproceedings{Book2010Large-16017,
  year={2010},
  doi={10.4229/25thEUPVSEC2010-2DO.2.6},
  title={Large area n-type silicon solar cells with selective front surface field and screen printed aluminium-alloyed rear emitter},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion},
  pages={1465--1468},
  editor={de Santi, G.F. and Ossenbrink, H. and Helm, P.},
  author={Book, Felix and Wiedenmann, Thomas and Dastgheib-Shirazi, Amir and Raabe, Bernd and Hahn, Giso}
}

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    <dc:creator>Hahn, Giso</dc:creator>
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    <dcterms:bibliographicCitation>Publ. in: 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion : proceedings of the international conference held 6-10 September 2010, in Valencia, Spain / G.F. de Santi, H. Ossenbrink and P. Helm (eds.). Munich, Germany : WIP-Renewable Energies, 2010. pp. 1465-1468</dcterms:bibliographicCitation>
    <dc:creator>Wiedenmann, Thomas</dc:creator>
    <dc:creator>Raabe, Bernd</dc:creator>
    <dc:language>eng</dc:language>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor>
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    <dc:contributor>Book, Felix</dc:contributor>
    <dc:creator>Book, Felix</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T09:45:25Z</dc:date>
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    <dcterms:abstract xml:lang="eng">Large area n-type silicon solar cells with a screen-printed aluminum rear side emitter are mainly limited by their front surface recombination velocity. In order to overcome this limitation, we use an industrially applicable etch-back process to create a selective front surface field (s-FSF). This process was developed for the formation of a single diffusion selective emitter on p-type silicon; it generates a deep doping profile with a low surface concentration which results in an excellent emitter saturation current and a highest independently confirmed stable cell efficiency of 18.7% on 5” p-type Cz silicon. In this work we focus on the applicability of this process to n-type silicon. 6” solar cells with different front side etchback depths have been processed from n-type silicon leading to a highest efficiency of 18.5% for a s-FSF cell and an average gain of 0.8%abs compared to cells with a homogeneous FSF. We furthermore investigate the quality of the etch-back FSF and the screen printed alloyed emitter from different pastes by QSSPC measurements.</dcterms:abstract>
    <dc:contributor>Wiedenmann, Thomas</dc:contributor>
    <dcterms:title>Large area n-type silicon solar cells with selective front surface field and screen printed aluminium-alloyed rear emitter</dcterms:title>
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    <dc:contributor>Raabe, Bernd</dc:contributor>
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    <dcterms:issued>2010</dcterms:issued>
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