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Electroless nickel and copper metallization: Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers

Electroless nickel and copper metallization: Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers

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BRAUN, Stefan, Erkan EMRE, Bernd RAABE, Giso HAHN, 2010. Electroless nickel and copper metallization: Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, 6. Sep 2010 - 10. Sep 2010. In: DE SANTI, G.F., ed., H. OSSENBRINK, ed., P. HELM, ed.. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, 6. Sep 2010 - 10. Sep 2010. Munich, Germany:WIP-Renewable Energies, pp. 1892-1895

@inproceedings{Braun2010Elect-16010, title={Electroless nickel and copper metallization: Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers}, year={2010}, doi={10.4229/25thEUPVSEC2010-2CV.2.51}, address={Munich, Germany}, publisher={WIP-Renewable Energies}, booktitle={25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion}, pages={1892--1895}, editor={de Santi, G.F. and Ossenbrink, H. and Helm, P.}, author={Braun, Stefan and Emre, Erkan and Raabe, Bernd and Hahn, Giso} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/16010"> <dcterms:bibliographicCitation>Publ. in: 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion : proceedings of the international conference held 6-10 September 2010, in Valencia, Spain / G.F. de Santi, H. Ossenbrink and P. Helm (eds.). Munich, Germany : WIP-Renewable Energies, 2010. pp. 1892-1895</dcterms:bibliographicCitation> <dc:language>eng</dc:language> <dc:creator>Raabe, Bernd</dc:creator> <dc:creator>Emre, Erkan</dc:creator> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T09:09:24Z</dc:date> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T09:09:24Z</dcterms:available> <dc:contributor>Braun, Stefan</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/16010"/> <dcterms:issued>2010</dcterms:issued> <dcterms:title>Electroless nickel and copper metallization: Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers</dcterms:title> <dc:creator>Braun, Stefan</dc:creator> <dcterms:abstract xml:lang="eng">An alternative approach to the silver thick film metallization for the front side of silicon solar cells can be implemented by electroless nickel and copper deposition. One of the most challenging problems for a wetchemical metallization sequence using nickel and copper is the phenomenon of background plating. Hereby the metal is not only deposited on the opened emitter structure but also on the insulating PECVD silicon nitride layer which causes additional shading to the solar cell. Contact properties of the metallization like contact resistance, adhesion and line resistance must be optimized. The nickel-silicon contact can be enhanced by an additional sintering step. In this paper the requirements for an adequate nickel silicide formation are discussed and it is shown how to reduce the problem of background plating on PECVD SiNx:H surfaces.</dcterms:abstract> <dc:creator>Hahn, Giso</dc:creator> <dc:rights>deposit-license</dc:rights> <dc:contributor>Emre, Erkan</dc:contributor> <dc:contributor>Raabe, Bernd</dc:contributor> </rdf:Description> </rdf:RDF>

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