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Al<sub>2</sub>O<sub>3</sub> rear surface passivation for silicon ribbon solar cells

Al2O3 rear surface passivation for silicon ribbon solar cells

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EBSER, Jan, Johannes JUNGE, Thomas LÜDER, Sven SEREN, Barbara TERHEIDEN, Giso HAHN, 2010. Al2O3 rear surface passivation for silicon ribbon solar cells. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, 6. Sep 2010 - 10. Sep 2010. In: DE SANTI, G.F., ed., H. OSSENBRINK, ed., P. HELM, ed.. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Munich, Germany:WIP-Renewable Energies, pp. 1134-1137. Available under: doi: 10.4229/25thEUPVSEC2010-2AO.2.1

@inproceedings{Ebser2010surfa-16004, title={Al2O3 rear surface passivation for silicon ribbon solar cells}, year={2010}, doi={10.4229/25thEUPVSEC2010-2AO.2.1}, address={Munich, Germany}, publisher={WIP-Renewable Energies}, booktitle={25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion}, pages={1134--1137}, editor={de Santi, G.F. and Ossenbrink, H. and Helm, P.}, author={Ebser, Jan and Junge, Johannes and Lüder, Thomas and Seren, Sven and Terheiden, Barbara and Hahn, Giso} }

2011-10-06T10:57:29Z Publ. in: 25th European Photovoltaic Solar Energy Conference and Exhibition. : 5th World Conference on photovoltaic Energy Conversion : proceedings of the international conference held 6-10 September 2010, in Valencia, Spain / G.F. de Santi, H. Ossenbrink and P. Helm (eds.). Munich, Germany : WIP-Renewable Energies, 2010. pp. 1134-1137 Lüder, Thomas Hahn, Giso Seren, Sven Junge, Johannes eng In this work the application of an Al2O3 surface passivation layer to low-cost multicrystalline silicon ribbon material is investigated. Symmetrical lifetime samples are prepared from adjacent p-doped EFG (Edge-defined Film-fed Growth) wafers and spatially resolved μPCD (Microwave detected PhotoConductance Decay) measurements are carried out to determine the minority charge carrier lifetime. It is shown that even very thin layers (5 nm) of Al2O3 can provide an excellent surface passivation of the mentioned silicon ribbon material. Instead of annealing in N2 ambience a MIRHP (Microwave Induced Remote Hydrogen Plasma) treatment is applied. This process step allows hydrogen atoms to pass the thin Al2O3 layer and to increase lifetime by passivating recombinative defects in the bulk material. In addition to the Al2O3 layer, hydrogen-rich silicon nitride (SiNx:H) is deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) on top of selected Al2O3 samples to increase the mechanical and chemical stability during a subsequent solar cell process. This deposition can replace the necessary Al2O3 annealing step leading to a comparable passivation quality. Finally, 2 x 2 cm2 solar cells are processed including the Al2O3 rear side passivation in a photolithography based highefficiency process reaching efficiencies above 18% on multicrystalline EFG material [1]. Ebser, Jan 2010 Terheiden, Barbara Terheiden, Barbara Ebser, Jan Seren, Sven 2011-10-06T10:57:29Z Lüder, Thomas Al<sub>2</sub>O<sub>3</sub> rear surface passivation for silicon ribbon solar cells Junge, Johannes Hahn, Giso terms-of-use

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