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Quantitative interpretation of light beam induced current contrast profiles: Back side surface influence

Quantitative interpretation of light beam induced current contrast profiles: Back side surface influence

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MICARD, Gabriel, Sven SEREN, Giso HAHN, 2010. Quantitative interpretation of light beam induced current contrast profiles: Back side surface influence. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, 6. Sep 2010 - 10. Sep 2010. In: DE SANTI, G.F., ed., H. OSSENBRINK, ed., P. HELM, ed.. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, 6. Sep 2010 - 10. Sep 2010. München:WIP Renewable Energies, pp. 520-527. Available under: doi: 10.4229/25thEUPVSEC2010-1DV.2.68

@inproceedings{Micard2010Quant-16002, title={Quantitative interpretation of light beam induced current contrast profiles: Back side surface influence}, year={2010}, doi={10.4229/25thEUPVSEC2010-1DV.2.68}, address={München}, publisher={WIP Renewable Energies}, booktitle={25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion}, pages={520--527}, editor={de Santi, G.F. and Ossenbrink, H. and Helm, P.}, author={Micard, Gabriel and Seren, Sven and Hahn, Giso} }

2011-10-04T10:54:20Z 2010 Hahn, Giso deposit-license Micard, Gabriel Micard, Gabriel The quantitative interpretation of a Light Beam Induced Current (LBIC) contrast profile of a grain boundary (GB) allows the extraction of the ‘recombination strength’ of the GB, characterized by its effective surface recombination velocity (Seff), and of the diffusion length (Ldiff) of the neighboring grains. The previous fitting model developed by Donolato [1] assumed an infinite wafer thickness (h) that restricts its validity to cases where Ldiff<<500 μm) the present extension can provide a local estimation of Sb that reflects the back side electrical quality. The quantitative evaluation of Ldiff and Seff is very useful for e.g. the evaluation of the effectiveness of a hydrogenation or gettering step in a solar cell process. Quantitative interpretation of light beam induced current contrast profiles: Back side surface influence Publ. in: 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion : proceedings of the international conference held 6-10 September 2010, in Valencia, Spain / G.F. de Santi, H. Ossenbrink and P. Helm (eds.). Munich, Germany : WIP-Renewable Energies, 2010. pp. 520-527 eng 2011-10-04T10:54:20Z Seren, Sven Seren, Sven Hahn, Giso

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