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The etchback selective emitter technology and its application to multicrystalline silicon

The etchback selective emitter technology and its application to multicrystalline silicon

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BOOK, Felix, Stefan BRAUN, Axel HERGUTH, Amir DASTGHEIB-SHIRAZI, Bernd RAABE, Giso HAHN, 2010. The etchback selective emitter technology and its application to multicrystalline silicon. 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). Honolulu, HI, USA, 20. Jun 2010 - 25. Jun 2010. In: 2010 35th IEEE Photovoltaic Specialists Conference. 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). Honolulu, HI, USA, 20. Jun 2010 - 25. Jun 2010. IEEE, pp. 001309-001314. ISBN 978-1-4244-5890-5

@inproceedings{Book2010-06etchb-15926, title={The etchback selective emitter technology and its application to multicrystalline silicon}, year={2010}, doi={10.1109/PVSC.2010.5614267}, isbn={978-1-4244-5890-5}, publisher={IEEE}, booktitle={2010 35th IEEE Photovoltaic Specialists Conference}, pages={001309--001314}, author={Book, Felix and Braun, Stefan and Herguth, Axel and Dastgheib-Shirazi, Amir and Raabe, Bernd and Hahn, Giso} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/15926"> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T08:51:47Z</dcterms:available> <dc:rights>deposit-license</dc:rights> <dcterms:bibliographicCitation>Publ. in: 35th IEEE Photovoltaic Specialists Conference (PVSC 2010): Honolulu, Hawaii, USA, 20 - 25 June 2010 / [IEEE Electron Devices Society]. Piscataway, NJ : IEEE, 2010. pp. 1309-1314</dcterms:bibliographicCitation> <dc:contributor>Herguth, Axel</dc:contributor> <dc:creator>Book, Felix</dc:creator> <dc:contributor>Hahn, Giso</dc:contributor> <dc:language>eng</dc:language> <dcterms:issued>2010-06</dcterms:issued> <dc:creator>Herguth, Axel</dc:creator> <dc:creator>Braun, Stefan</dc:creator> <dc:contributor>Braun, Stefan</dc:contributor> <dc:contributor>Raabe, Bernd</dc:contributor> <dcterms:title>The etchback selective emitter technology and its application to multicrystalline silicon</dcterms:title> <dcterms:abstract xml:lang="eng">We have developed a simple and industrially applicable selective emitter cell process using only one diffusion step and an emitter etchback to create the high sheet resistance emitter. The process generates a deeper doping profile with a lower surface phosphorous concentration than a directly diffused emitter with the same sheet resistance. This results in an extremely low emitter saturation current j0E even at a moderate sheet resistance of 60-80 Ω/□. The highest independently confirmed cell efficiency on Cz-Si (146 cm²) was 18.7%. In this work the etching behavior of the acidic solution at the grain boundaries is studied by SEM imaging and high resolution LBIC measurements at 405 nm wavelength. The etchback also leads to a change in reflectivity, which is quantified by reflectance measurements. We furthermore investigate the influence of the base material quality on the gain that can be achieved by this process. Large area solar cells have been processed from solar grade and UMG mc silicon.</dcterms:abstract> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:creator>Dastgheib-Shirazi, Amir</dc:creator> <dc:creator>Hahn, Giso</dc:creator> <dc:creator>Raabe, Bernd</dc:creator> <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T08:51:47Z</dc:date> <dc:contributor>Book, Felix</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/15926"/> </rdf:Description> </rdf:RDF>

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