Influence of the dopant on the contact formation to p+-type silicon

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:afeb4b70db737d4f7d1d7aa30d568afc

RIEGEL, Stefanie, Florian MUTTER, Giso HAHN, Barbara TERHEIDEN, 2011. Influence of the dopant on the contact formation to p+-type silicon. In: Energy Procedia. 8, pp. 533-539. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.178

@article{Riegel2011Influ-15924, title={Influence of the dopant on the contact formation to p+-type silicon}, year={2011}, doi={10.1016/j.egypro.2011.06.178}, volume={8}, issn={1876-6102}, journal={Energy Procedia}, pages={533--539}, author={Riegel, Stefanie and Mutter, Florian and Hahn, Giso and Terheiden, Barbara} }

deposit-license Terheiden, Barbara 2011-09-30T08:50:41Z Influence of the dopant on the contact formation to p+-type silicon Riegel, Stefanie Hahn, Giso In this contribution we investigate the influence of the doping element on the contact formation to p+-type Si. Contacting B doped layers with Ag thick film paste leads to very few Ag crystallites at the contact interface and results in poor contact resistances [1] R. Lago, L. Pérez, H. Kerp, I. Freire, I. Hoces and N. Azkona, Screen printing metallization of boron emitters. Prog Photovolt Res Appl, 18 (2010), pp. 20–27. | View Record in Scopus | | Full Text via CrossRef[1], [2] and [3]. Using Ag/Al thick film paste for contact formation, the contact is not only formed by Ag crystallites, but by diversely shaped Ag/Al contact spots and the contact resistance is reduced by more than one order of magnitude [2]. Al melting at the Si wafer surface forms Al doped rectangles on the Si wafer where the growth of Ag/Al/Pb spikes is enhanced.<br /><br />When contacting Al doped layers with Ag thick film paste a larger number of Ag crystallites is observed than for B doped layers. If the contact is formed with Ag/Al paste the number of Al-rich rectangles is enhanced and we detect higher doped areas under the contact spots. The contacts detected have an ellipsoidal, pyramidal or “L-formed” shape. We conclude that not only the acceptor impurity concentration under the contact area is crucial for the contact formation, but also the properties of the specific acceptor present. eng Hahn, Giso 2011-09-30T08:50:41Z Mutter, Florian Publ. in: Energy Procedia ; 8 (2011). - pp. 533-539 Riegel, Stefanie Mutter, Florian 2011 Terheiden, Barbara

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

Riegel_159246_flat.pdf 45

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto