Type of Publication: | Journal article |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-159246 |
Author: | Riegel, Stefanie; Mutter, Florian; Hahn, Giso; Terheiden, Barbara |
Year of publication: | 2011 |
Published in: | Energy Procedia ; 8 (2011). - pp. 533-539. - ISSN 1876-6102 |
DOI (citable link): | https://dx.doi.org/10.1016/j.egypro.2011.06.178 |
Summary: |
In this contribution we investigate the influence of the doping element on the contact formation to p+-type Si. Contacting B doped layers with Ag thick film paste leads to very few Ag crystallites at the contact interface and results in poor contact resistances [1] R. Lago, L. Pérez, H. Kerp, I. Freire, I. Hoces and N. Azkona, Screen printing metallization of boron emitters. Prog Photovolt Res Appl, 18 (2010), pp. 20–27. | View Record in Scopus | | Full Text via CrossRef[1], [2] and [3]. Using Ag/Al thick film paste for contact formation, the contact is not only formed by Ag crystallites, but by diversely shaped Ag/Al contact spots and the contact resistance is reduced by more than one order of magnitude [2]. Al melting at the Si wafer surface forms Al doped rectangles on the Si wafer where the growth of Ag/Al/Pb spikes is enhanced.
When contacting Al doped layers with Ag thick film paste a larger number of Ag crystallites is observed than for B doped layers. If the contact is formed with Ag/Al paste the number of Al-rich rectangles is enhanced and we detect higher doped areas under the contact spots. The contacts detected have an ellipsoidal, pyramidal or “L-formed” shape. We conclude that not only the acceptor impurity concentration under the contact area is crucial for the contact formation, but also the properties of the specific acceptor present. |
Subject (DDC): | 530 Physics |
Keywords: | screen printing, contact to p+, Ag-based paste, contact formation |
Link to License: | Attribution-NonCommercial-NoDerivs 3.0 Unported |
Bibliography of Konstanz: | Yes |
RIEGEL, Stefanie, Florian MUTTER, Giso HAHN, Barbara TERHEIDEN, 2011. Influence of the dopant on the contact formation to p+-type silicon. In: Energy Procedia. 8, pp. 533-539. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.178
@article{Riegel2011Influ-15924, title={Influence of the dopant on the contact formation to p+-type silicon}, year={2011}, doi={10.1016/j.egypro.2011.06.178}, volume={8}, issn={1876-6102}, journal={Energy Procedia}, pages={533--539}, author={Riegel, Stefanie and Mutter, Florian and Hahn, Giso and Terheiden, Barbara} }
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