Passivation of Si wafers by Al2O3 films with different surface conditioning

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LÜDER, Thomas, Giso HAHN, Barbara TERHEIDEN, 2011. Passivation of Si wafers by Al2O3 films with different surface conditioning. In: Energy Procedia. 8, pp. 660-665. ISSN 1876-6102

@article{Luder2011Passi-15923, title={Passivation of Si wafers by Al2O3 films with different surface conditioning}, year={2011}, doi={10.1016/j.egypro.2011.06.198}, volume={8}, issn={1876-6102}, journal={Energy Procedia}, pages={660--665}, author={Lüder, Thomas and Hahn, Giso and Terheiden, Barbara} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/15923"> <dcterms:issued>2011</dcterms:issued> <dc:language>eng</dc:language> <dcterms:bibliographicCitation>Energy Procedia ; 8 (2011). - pp. 660-665</dcterms:bibliographicCitation> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-09-30T08:46:45Z</dc:date> <dc:contributor>Lüder, Thomas</dc:contributor> <dc:rights>deposit-license</dc:rights> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-09-30T08:46:45Z</dcterms:available> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/15923"/> <dcterms:title>Passivation of Si wafers by Al2O3 films with different surface conditioning</dcterms:title> <dcterms:abstract xml:lang="eng">We investigate the passivation quality of Al2O3 thin films grown by atomic laver deposition on differently etched surfaces of ∼500 μm thick, 2.13 Ωcm p-type float zone silicon wafers with an (100) crystal orientation. The applied CP- and KOH-etches lead to differently shaped surface morphologies but almost equal root-mean-squared (rms) roughnesses of ∼0.95 nm (CP) and ∼1.07 nm (KOH) measured within an area of 1 × 1 μm2 on the Si surface. The lowest surface recombination velocities after passivation resulting in effective carrier lifetimes up to 10 ms are achieved for samples treated with CP-etching. The lifetime is determined using a WCT-120 in the transient mode. It is shown that these lifetimes slightly exceed the theoretical limit given by a parameterization of the Auger recombination. Furthermore, scanning electron microscope images show that Al2O3 thin films with a thickness of ∼29 nm and ∼58 nm fully cover random pyramid textured Si surfaces of (111) orientation leading to high effective lifetimes up to 6 ms. The temperature of the wafer surface during the deposition is determined by in situ spectroscopic ellipsometry to be ∼180 °C.</dcterms:abstract> <dc:contributor>Hahn, Giso</dc:contributor> <dc:contributor>Terheiden, Barbara</dc:contributor> <dc:creator>Terheiden, Barbara</dc:creator> <dc:creator>Lüder, Thomas</dc:creator> <dc:creator>Hahn, Giso</dc:creator> </rdf:Description> </rdf:RDF>

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