Electrical characterisation of crystalline silicon thin-film material

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ROSENITS, Philipp, 2011. Electrical characterisation of crystalline silicon thin-film material. 1. Aufl.. München : Dr. Hut. ISBN 978-3-86853-946-2

@phdthesis{Rosenits2011Elect-13958, title={Electrical characterisation of crystalline silicon thin-film material}, year={2011}, author={Rosenits, Philipp}, address={Konstanz}, school={Universität Konstanz} }

eng München : Dr. Hut Rosenits, Philipp 2011-07-05T07:20:08Z Epitaxial wafer equivalents combine the high efficiencies of conventional wafer-based silicon solar cells with the low production costs of thin-film solar cells. However, many electrical properties of this material are still unknown.<br /><br />One important part of this work comprised the development and establishment of measurement and analysis methods which enable the assessment of the electrical quality of crystalline silicon thin-film (cSiTF) material. Lifetime measurement methods that are already well-established for the characterisation of standard wafer material, such as the microwave-detected photoconductance decay (MWPCD) method, photoluminescence (PL) or quasi-steady-state photoconductance (QSSPC) measurements, have been adapted or modified to suit the needs of cSiTF material.<br /><br />Another important aspect of this thesis was the assessment of the determined minority carrier lifetime and the estimation of its impact on the performance of the final thin-film solar cell. Therefore, a series of solar cells have been processed, analysed and their cell results compared to the lifetimes measured on the starting material. By applying a standard cell process and using highly-doped Czochralski substrates, cell efficiencies of around 15% at an epitaxial base thickness of 15 µm have been achieved, approaching 16.5% for 40 µm thick epitaxial layers. Furthermore, if the same epitaxial layers are deposited on (electrically active) 1 Ωcm p-type float zone substrates, efficiencies up to 18.0% have been archieved. Rosenits, Philipp 978-3-86853-946-2 deposit-license 2011-07-05T07:20:08Z Electrical characterisation of crystalline silicon thin-film material 2011

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