Kinetics of the boron-oxygen related defect in theory and experiment

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HERGUTH, Axel, Giso HAHN, 2010. Kinetics of the boron-oxygen related defect in theory and experiment. In: Journal of Applied Physics. 108(11), 114509. Available under: doi: 10.1063/1.3517155

@article{Herguth2010Kinet-13341, title={Kinetics of the boron-oxygen related defect in theory and experiment}, year={2010}, doi={10.1063/1.3517155}, number={11}, volume={108}, journal={Journal of Applied Physics}, author={Herguth, Axel and Hahn, Giso}, note={Article Number: 114509} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dcterms:bibliographicCitation>First publ. in: Journal of Applied Physics ; 108 (2010), 11. - 114509</dcterms:bibliographicCitation> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:rights>terms-of-use</dc:rights> <dc:date rdf:datatype="">2011-05-18T06:07:23Z</dc:date> <dspace:hasBitstream rdf:resource=""/> <dspace:isPartOfCollection rdf:resource=""/> <dc:language>eng</dc:language> <dcterms:available rdf:datatype="">2011-05-18T06:07:23Z</dcterms:available> <dcterms:title>Kinetics of the boron-oxygen related defect in theory and experiment</dcterms:title> <dcterms:hasPart rdf:resource=""/> <dc:contributor>Hahn, Giso</dc:contributor> <dc:contributor>Herguth, Axel</dc:contributor> <dcterms:isPartOf rdf:resource=""/> <dc:creator>Herguth, Axel</dc:creator> <dcterms:rights rdf:resource=""/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Hahn, Giso</dc:creator> <bibo:uri rdf:resource=""/> <dcterms:issued>2010</dcterms:issued> <dcterms:abstract xml:lang="eng">The formation of boron-oxygen complexes in boron-doped crystalline silicon can lead to a severe reduction in the minority charge carrier lifetime. This strongly influences, e.g., solar cell efficiencies if the material is used for photovoltaic application. Recent investigations have shown that a recovery of the carrier lifetime can be achieved by a subsequent thermally enhanced reaction induced by charge carriers. A model of the reaction dynamics of the boron-oxygen complex by means of rate equations is presented in this paper. Following a mathematical description of the reactions involved, the consequences based on the calculations are presented and allow a prediction of the observable electrical parameters. The fundamental agreement with measured data is proven experimentally for different phenomena.</dcterms:abstract> </rdf:Description> </rdf:RDF>

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