DX behaviour of Si donors in AlGaN alloys

dc.contributor.authorBrandt, Martin S.
dc.contributor.authorZeisel, Roland
dc.contributor.authorGoennenwein, Sebastian T. B.
dc.contributor.authorBayerl, Martin W.
dc.contributor.authorStutzmann, Martin
dc.date.accessioned2021-02-11T10:43:49Z
dc.date.available2021-02-11T10:43:49Z
dc.date.issued2003eng
dc.description.abstractRecent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light‐induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation‐recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1002/pssb.200301521eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/52802
dc.language.isoengeng
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc530eng
dc.titleDX behaviour of Si donors in AlGaN alloyseng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Brandt2003behav-52802,
  year={2003},
  doi={10.1002/pssb.200301521},
  title={DX behaviour of Si donors in AlGaN alloys},
  number={1},
  volume={235},
  issn={0370-1972},
  journal={Physica Status Solidi (B) - Basic Solid State Physics},
  pages={13--19},
  author={Brandt, Martin S. and Zeisel, Roland and Goennenwein, Sebastian T. B. and Bayerl, Martin W. and Stutzmann, Martin}
}
kops.citation.iso690BRANDT, Martin S., Roland ZEISEL, Sebastian T. B. GOENNENWEIN, Martin W. BAYERL, Martin STUTZMANN, 2003. DX behaviour of Si donors in AlGaN alloys. In: Physica Status Solidi (B) - Basic Solid State Physics. Wiley. 2003, 235(1), pp. 13-19. ISSN 0370-1972. eISSN 1521-3951. Available under: doi: 10.1002/pssb.200301521deu
kops.citation.iso690BRANDT, Martin S., Roland ZEISEL, Sebastian T. B. GOENNENWEIN, Martin W. BAYERL, Martin STUTZMANN, 2003. DX behaviour of Si donors in AlGaN alloys. In: Physica Status Solidi (B) - Basic Solid State Physics. Wiley. 2003, 235(1), pp. 13-19. ISSN 0370-1972. eISSN 1521-3951. Available under: doi: 10.1002/pssb.200301521eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/52802">
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Brandt, Martin S.</dc:creator>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:contributor>Zeisel, Roland</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/52802"/>
    <dc:contributor>Goennenwein, Sebastian T. B.</dc:contributor>
    <dc:creator>Goennenwein, Sebastian T. B.</dc:creator>
    <dc:contributor>Brandt, Martin S.</dc:contributor>
    <dc:rights>terms-of-use</dc:rights>
    <dcterms:abstract xml:lang="eng">Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light‐induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation‐recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.</dcterms:abstract>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Zeisel, Roland</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-02-11T10:43:49Z</dcterms:available>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-02-11T10:43:49Z</dc:date>
    <dc:language>eng</dc:language>
    <dc:contributor>Stutzmann, Martin</dc:contributor>
    <dcterms:title>DX behaviour of Si donors in AlGaN alloys</dcterms:title>
    <dc:creator>Bayerl, Martin W.</dc:creator>
    <dc:contributor>Bayerl, Martin W.</dc:contributor>
    <dcterms:issued>2003</dcterms:issued>
    <dc:creator>Stutzmann, Martin</dc:creator>
  </rdf:Description>
</rdf:RDF>
kops.flag.isPeerReviewedtrueeng
kops.flag.knbibliographyfalse
kops.sourcefieldPhysica Status Solidi (B) - Basic Solid State Physics. Wiley. 2003, <b>235</b>(1), pp. 13-19. ISSN 0370-1972. eISSN 1521-3951. Available under: doi: 10.1002/pssb.200301521deu
kops.sourcefield.plainPhysica Status Solidi (B) - Basic Solid State Physics. Wiley. 2003, 235(1), pp. 13-19. ISSN 0370-1972. eISSN 1521-3951. Available under: doi: 10.1002/pssb.200301521deu
kops.sourcefield.plainPhysica Status Solidi (B) - Basic Solid State Physics. Wiley. 2003, 235(1), pp. 13-19. ISSN 0370-1972. eISSN 1521-3951. Available under: doi: 10.1002/pssb.200301521eng
relation.isAuthorOfPublication5f95d919-0336-47a4-9574-cc1393d8fd45
relation.isAuthorOfPublication.latestForDiscovery5f95d919-0336-47a4-9574-cc1393d8fd45
source.bibliographicInfo.fromPage13eng
source.bibliographicInfo.issue1eng
source.bibliographicInfo.toPage19eng
source.bibliographicInfo.volume235eng
source.identifier.eissn1521-3951eng
source.identifier.issn0370-1972eng
source.periodicalTitlePhysica Status Solidi (B) - Basic Solid State Physicseng
source.publisherWileyeng

Dateien