DX behaviour of Si donors in AlGaN alloys
| dc.contributor.author | Brandt, Martin S. | |
| dc.contributor.author | Zeisel, Roland | |
| dc.contributor.author | Goennenwein, Sebastian T. B. | |
| dc.contributor.author | Bayerl, Martin W. | |
| dc.contributor.author | Stutzmann, Martin | |
| dc.date.accessioned | 2021-02-11T10:43:49Z | |
| dc.date.available | 2021-02-11T10:43:49Z | |
| dc.date.issued | 2003 | eng |
| dc.description.abstract | Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light‐induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation‐recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed. | eng |
| dc.description.version | published | eng |
| dc.identifier.doi | 10.1002/pssb.200301521 | eng |
| dc.identifier.uri | https://kops.uni-konstanz.de/handle/123456789/52802 | |
| dc.language.iso | eng | eng |
| dc.rights | terms-of-use | |
| dc.rights.uri | https://rightsstatements.org/page/InC/1.0/ | |
| dc.subject.ddc | 530 | eng |
| dc.title | DX behaviour of Si donors in AlGaN alloys | eng |
| dc.type | JOURNAL_ARTICLE | eng |
| dspace.entity.type | Publication | |
| kops.citation.bibtex | @article{Brandt2003behav-52802,
year={2003},
doi={10.1002/pssb.200301521},
title={DX behaviour of Si donors in AlGaN alloys},
number={1},
volume={235},
issn={0370-1972},
journal={Physica Status Solidi (B) - Basic Solid State Physics},
pages={13--19},
author={Brandt, Martin S. and Zeisel, Roland and Goennenwein, Sebastian T. B. and Bayerl, Martin W. and Stutzmann, Martin}
} | |
| kops.citation.iso690 | BRANDT, Martin S., Roland ZEISEL, Sebastian T. B. GOENNENWEIN, Martin W. BAYERL, Martin STUTZMANN, 2003. DX behaviour of Si donors in AlGaN alloys. In: Physica Status Solidi (B) - Basic Solid State Physics. Wiley. 2003, 235(1), pp. 13-19. ISSN 0370-1972. eISSN 1521-3951. Available under: doi: 10.1002/pssb.200301521 | deu |
| kops.citation.iso690 | BRANDT, Martin S., Roland ZEISEL, Sebastian T. B. GOENNENWEIN, Martin W. BAYERL, Martin STUTZMANN, 2003. DX behaviour of Si donors in AlGaN alloys. In: Physica Status Solidi (B) - Basic Solid State Physics. Wiley. 2003, 235(1), pp. 13-19. ISSN 0370-1972. eISSN 1521-3951. Available under: doi: 10.1002/pssb.200301521 | eng |
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<dcterms:abstract xml:lang="eng">Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light‐induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation‐recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al<sub>0.75</sub>Ga<sub>0.25</sub>N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.</dcterms:abstract>
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