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Spin transport and spin dephasing in zinc oxide

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2012

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Althammer, Matthias
Karrer-Müller, Eva-Maria
Opel, Matthias
Gross, Rudolf

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https://doi.org/10.1063/1.4747321
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http://arxiv.org/abs/1205.3666v3

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Applied Physics Letters. American Institute of Physics (AIP). 2012, 101(8), 082404. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.4747321

Zusammenfassung

The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in all-electrical experiments. The measured magnetoresistance agrees well with the prediction of a two spin channel model with spin-dependent interface resistance. Fitting the data yields spin diffusion lengths of 10.8nm (2K), 10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns (2K), 2.0ns (10K), and 31ps (200K).

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ISO 690ALTHAMMER, Matthias, Eva-Maria KARRER-MÜLLER, Sebastian T. B. GOENNENWEIN, Matthias OPEL, Rudolf GROSS, 2012. Spin transport and spin dephasing in zinc oxide. In: Applied Physics Letters. American Institute of Physics (AIP). 2012, 101(8), 082404. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.4747321
BibTex
@article{Althammer2012-05-16T13:05:40Ztrans-52356,
  year={2012},
  doi={10.1063/1.4747321},
  title={Spin transport and spin dephasing in zinc oxide},
  number={8},
  volume={101},
  issn={0003-6951},
  journal={Applied Physics Letters},
  author={Althammer, Matthias and Karrer-Müller, Eva-Maria and Goennenwein, Sebastian T. B. and Opel, Matthias and Gross, Rudolf},
  note={Article Number: 082404}
}
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