Publikation: Ion Beam Patterning of HTS-Thin Films
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1997
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Institute of Physics Conference Series. 1997, pp. 133-136
Zusammenfassung
Ion implantation was used for patterning epitaxial YBCO-thin films. This patterning technique bases on a local disordering of the crystal structure of the MTS due to elastic collisions of the implanted ions. The disordering of the crystal in the irradiated areas leads to a break down uf the superconducting properties. Circular and meandering patterns with a size of 1 mm were prepared for investigations with regard to high-current-applications. Oxygen ions with an energy of 180 keV were used to avoid a contamination of the remaining superconducting-YBCO-path The achieved structures were investigated concerning a dependence on the dose by means of RBS, XRD, AFM as well as magneto-optically. Using an ion fluence of 5 x 10 14 04/cm2 a fully planar panem can be obtained.
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KUHN, Marcus, Bernd SCHEY, Wolfgang BIEGEL, Bernd STRITZKER, Johannes EISENMENGER, Paul LEIDERER, 1997. Ion Beam Patterning of HTS-Thin Films. In: Institute of Physics Conference Series. 1997, pp. 133-136BibTex
@inproceedings{Kuhn1997Patte-4763,
year={1997},
title={Ion Beam Patterning of HTS-Thin Films},
booktitle={Institute of Physics Conference Series},
pages={133--136},
author={Kuhn, Marcus and Schey, Bernd and Biegel, Wolfgang and Stritzker, Bernd and Eisenmenger, Johannes and Leiderer, Paul}
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<dcterms:abstract xml:lang="eng">Ion implantation was used for patterning epitaxial YBCO-thin films. This patterning technique bases on a local disordering of the crystal structure of the MTS due to elastic collisions of the implanted ions. The disordering of the crystal in the irradiated areas leads to a break down uf the superconducting properties. Circular and meandering patterns with a size of 1 mm were prepared for investigations with regard to high-current-applications. Oxygen ions with an energy of 180 keV were used to avoid a contamination of the remaining superconducting-YBCO-path The achieved structures were investigated concerning a dependence on the dose by means of RBS, XRD, AFM as well as magneto-optically. Using an ion fluence of 5 x 10 14 04/cm2 a fully planar panem can be obtained.</dcterms:abstract>
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