Publikation: Do lomer dislocations spoil high performance of mc-Si solar cells?
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2015
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Energy Procedia. 2015, 77, pp. 565-571. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2015.07.081
Zusammenfassung
Material induced inherent efficiency losses of multicrystalline silicon solar cells have been investigated across all scales from the solar cell down to the atomic structure of the responsible crystallographic defects. Material inherent efficiency losses can be attributed to local increased dark current, which is found at recombination active small angle grain boundaries and accounts to several per-cent absolute. Aone-to-one correlation between the density of Lomer dislocations and the strength of the recombination activity of small angle grain boundaries is found by electron-beam induced current measurements and scanning transmission electron microscope investigations. The increased recombination activity of Lomer dislocations is attributed to their immobile nature, which favors contamination by impurities.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
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efficiency losses; Lomer dislocations; multicrystalline Silicon; dark lock-in thermography; transmission electron microscopy; EBIC
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BAUER, Jan, Angelika HÄHNEL, Horst BLUMTRITT, Hakan DENIZ, Annika ZUSCHLAG, Otwin BREITENSTEIN, 2015. Do lomer dislocations spoil high performance of mc-Si solar cells?. In: Energy Procedia. 2015, 77, pp. 565-571. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2015.07.081BibTex
@article{Bauer2015lomer-33256,
year={2015},
doi={10.1016/j.egypro.2015.07.081},
title={Do lomer dislocations spoil high performance of mc-Si solar cells?},
volume={77},
journal={Energy Procedia},
pages={565--571},
author={Bauer, Jan and Hähnel, Angelika and Blumtritt, Horst and Deniz, Hakan and Zuschlag, Annika and Breitenstein, Otwin}
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<dcterms:abstract xml:lang="eng">Material induced inherent efficiency losses of multicrystalline silicon solar cells have been investigated across all scales from the solar cell down to the atomic structure of the responsible crystallographic defects. Material inherent efficiency losses can be attributed to local increased dark current, which is found at recombination active small angle grain boundaries and accounts to several per-cent absolute. Aone-to-one correlation between the density of Lomer dislocations and the strength of the recombination activity of small angle grain boundaries is found by electron-beam induced current measurements and scanning transmission electron microscope investigations. The increased recombination activity of Lomer dislocations is attributed to their immobile nature, which favors contamination by impurities.</dcterms:abstract>
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