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Numerical Optimization of Light-induced Regeneration of Boron-Oxygen related Defects in Crystalline Silicon

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2021

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2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2021, pp. 0192-0194. ISBN 978-1-66541-922-2. Available under: doi: 10.1109/PVSC43889.2021.9518598

Zusammenfassung

The interplay of boron-oxygen related defect dynamics and temperature dynamics under intense illumination is addressed by means of simulations. Especially the impact of intensity on injection and temperature on cell level is discussed. Furthermore, it is exemplarily shown how the regeneration process can be optimized numerically.

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530 Physik

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2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 20. Juni 2021 - 25. Juni 2021, Fort Lauderdale, FL, USA
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ISO 690HERGUTH, Axel, 2021. Numerical Optimization of Light-induced Regeneration of Boron-Oxygen related Defects in Crystalline Silicon. 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). Fort Lauderdale, FL, USA, 20. Juni 2021 - 25. Juni 2021. In: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2021, pp. 0192-0194. ISBN 978-1-66541-922-2. Available under: doi: 10.1109/PVSC43889.2021.9518598
BibTex
@inproceedings{Herguth2021Numer-55704,
  year={2021},
  doi={10.1109/PVSC43889.2021.9518598},
  title={Numerical Optimization of Light-induced Regeneration of Boron-Oxygen related Defects in Crystalline Silicon},
  isbn={978-1-66541-922-2},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)},
  pages={0192--0194},
  author={Herguth, Axel}
}
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