Publikation: RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts
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2024
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Institutionen der Bundesrepublik Deutschland: FKZ 03EE1106B
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DUBOIS, Sébastien, Hrsg.. Vol. 2 (2024) : SiliconPV 2024, 14th International Conference on Crystalline Silicon Photovoltaics (Proceedings). Hannover: TIB Open Publishing, 2024. eISSN 2940-2123. Verfügbar unter: doi: 10.52825/siliconpv.v2i.1303
Zusammenfassung
We investigate TiNx layers deposited via RF magnetron sputtering on their efficacy as a diffusion barrier layer between Al and tunnel oxide passivated contact layer stacks during contact formation in a fast firing process. We obtain implied open-circuit voltage (iVOC) from photo-conductance decay measurements in order to analyse the diffusion barrier quality for different parameter variations. In particular, we show the impact of both higher peak temperature and increased thermal budget (by decreasing the slope of the temperature ramp) on iVoc during the sintering (“fast firing”) process, leading to passivation quality losses. iVOC losses below 1.5% are shown for peak firing temperatures up to 725°C, with absolute values up to 717 mV after firing. Contact formation at this temperature yields median contact resistivity (ρc) values below 3 mΩcm2 with a sheet resistance (Rsheet) of about 40 Ω/□ for the Ti-based layers.
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530 Physik
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Passivating Contact, Aluminum Paste, Diffusion Barrier
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14th International Conference on Crystalline Silicon Photovoltaics, 15. Apr. 2024 - 19. Apr. 2024, Chambéry, France
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GAPP, Benjamin, Heiko PLAGWITZ, Giso HAHN, Barbara TERHEIDEN, 2024. RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts. 14th International Conference on Crystalline Silicon Photovoltaics. Chambéry, France, 15. Apr. 2024 - 19. Apr. 2024. In: DUBOIS, Sébastien, Hrsg.. Vol. 2 (2024) : SiliconPV 2024, 14th International Conference on Crystalline Silicon Photovoltaics (Proceedings). Hannover: TIB Open Publishing, 2024. eISSN 2940-2123. Verfügbar unter: doi: 10.52825/siliconpv.v2i.1303BibTex
@inproceedings{Gapp2024-12-06RFSpu-74040,
title={RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts},
year={2024},
doi={10.52825/siliconpv.v2i.1303},
address={Hannover},
publisher={TIB Open Publishing},
booktitle={Vol. 2 (2024) : SiliconPV 2024, 14th International Conference on Crystalline Silicon Photovoltaics (Proceedings)},
editor={Dubois, Sébastien},
author={Gapp, Benjamin and Plagwitz, Heiko and Hahn, Giso and Terheiden, Barbara}
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<dcterms:abstract>We investigate TiNx layers deposited via RF magnetron sputtering on their efficacy as a diffusion barrier layer between Al and tunnel oxide passivated contact layer stacks during contact formation in a fast firing process. We obtain implied open-circuit voltage (iVOC) from photo-conductance decay measurements in order to analyse the diffusion barrier quality for different parameter variations. In particular, we show the impact of both higher peak temperature and increased thermal budget (by decreasing the slope of the temperature ramp) on iVoc during the sintering (“fast firing”) process, leading to passivation quality losses. iVOC losses below 1.5% are shown for peak firing temperatures up to 725°C, with absolute values up to 717 mV after firing. Contact formation at this temperature yields median contact resistivity (ρc) values below 3 mΩcm2 with a sheet resistance (Rsheet) of about 40 Ω/□ for the Ti-based layers.</dcterms:abstract>
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