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Influence of Polysilicon Thickness on Properties of Screen‐Printed Silver Paste Metallized Silicon Oxide/Polysilicon Passivated Contacts

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2021

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Chaudhary, Aditya
Hoß, Jan
Lossen, Jan
Kopecek, Radovan
van Swaaij, René
Zeman, Miro

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Physica Status Solidi (A) - Applications and Materials Science. Wiley. 2021, 218(18), 2100243. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.202100243

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This work investigates how the thickness of the polysilicon layer and temperatures during contact sintering influence the properties of SiOx/polysilicon passivated contacts. The n+ polysilicon layers deposited by low-pressure chemical vapor deposition (LPCVD) on top of a thin wet chemically grown interface oxide layer providing chemical and field-effect passivation on n-type monocrystalline silicon wafers are investigated. Three different polysilicon layer thicknesses of 50, 100, and 150 nm are considered in this work. A high level of passivation with implied Voc values above 735 mV and J01 below 5 fA cm−2 is obtained for symmetric lifetime test samples. These samples are used to investigate the interaction of the silver paste with the polysilicon layer at different fast firing peak temperatures. Reduction in polysilicon layer thickness leads to an increase in contact resistivity as well as in J0met. Excellent J0met values of the order of J01 with contact resistivity values below 2 mΩ cm2 are obtained for samples with polysilicon layers of 100 and 150 nm thickness.

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ISO 690CHAUDHARY, Aditya, Jan HOSS, Jan LOSSEN, Frank HUSTER, Radovan KOPECEK, René VAN SWAAIJ, Miro ZEMAN, 2021. Influence of Polysilicon Thickness on Properties of Screen‐Printed Silver Paste Metallized Silicon Oxide/Polysilicon Passivated Contacts. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley. 2021, 218(18), 2100243. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.202100243
BibTex
@article{Chaudhary2021Influ-54661,
  year={2021},
  doi={10.1002/pssa.202100243},
  title={Influence of Polysilicon Thickness on Properties of Screen‐Printed Silver Paste Metallized Silicon Oxide/Polysilicon Passivated Contacts},
  number={18},
  volume={218},
  issn={1862-6300},
  journal={Physica Status Solidi (A) - Applications and Materials Science},
  author={Chaudhary, Aditya and Hoß, Jan and Lossen, Jan and Huster, Frank and Kopecek, Radovan and van Swaaij, René and Zeman, Miro},
  note={Article Number: 2100243}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/54661">
    <dc:contributor>Huster, Frank</dc:contributor>
    <dcterms:title>Influence of Polysilicon Thickness on Properties of Screen‐Printed Silver Paste Metallized Silicon Oxide/Polysilicon Passivated Contacts</dcterms:title>
    <dc:contributor>Hoß, Jan</dc:contributor>
    <dcterms:abstract xml:lang="eng">This work investigates how the thickness of the polysilicon layer and temperatures during contact sintering influence the properties of SiO&lt;sub&gt;x&lt;/sub&gt;/polysilicon passivated contacts. The n&lt;sup&gt;+&lt;/sup&gt; polysilicon layers deposited by low-pressure chemical vapor deposition (LPCVD) on top of a thin wet chemically grown interface oxide layer providing chemical and field-effect passivation on n-type monocrystalline silicon wafers are investigated. Three different polysilicon layer thicknesses of 50, 100, and 150 nm are considered in this work. A high level of passivation with implied V&lt;sub&gt;oc&lt;/sub&gt; values above 735 mV and J&lt;sub&gt;01&lt;/sub&gt; below 5 fA cm&lt;sup&gt;−2&lt;/sup&gt; is obtained for symmetric lifetime test samples. These samples are used to investigate the interaction of the silver paste with the polysilicon layer at different fast firing peak temperatures. Reduction in polysilicon layer thickness leads to an increase in contact resistivity as well as in J&lt;sub&gt;0met&lt;/sub&gt;. Excellent J&lt;sub&gt;0met&lt;/sub&gt; values of the order of J&lt;sub&gt;01&lt;/sub&gt; with contact resistivity values below 2 mΩ cm&lt;sup&gt;2&lt;/sup&gt; are obtained for samples with polysilicon layers of 100 and 150 nm thickness.</dcterms:abstract>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Zeman, Miro</dc:contributor>
    <dc:contributor>Chaudhary, Aditya</dc:contributor>
    <dc:creator>van Swaaij, René</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-08-20T11:40:27Z</dc:date>
    <dc:contributor>van Swaaij, René</dc:contributor>
    <dc:creator>Lossen, Jan</dc:creator>
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Kopecek, Radovan</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Huster, Frank</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-08-20T11:40:27Z</dcterms:available>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/54661"/>
    <dc:creator>Kopecek, Radovan</dc:creator>
    <dc:contributor>Lossen, Jan</dc:contributor>
    <dc:creator>Zeman, Miro</dc:creator>
    <dc:creator>Chaudhary, Aditya</dc:creator>
    <dc:creator>Hoß, Jan</dc:creator>
    <dcterms:issued>2021</dcterms:issued>
  </rdf:Description>
</rdf:RDF>

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