Publikation:

Bulk hydrogenation in mc-Si by PECVD SiNx deposition using direct and remote plasma

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Herzog_opus-121388.pdf
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Datum

2008

Autor:innen

Herzog, Bernhard
Hofmann, Marc
Romijn, Ingrid G.
Weeber, Arthur W.

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-121388
DOI (zitierfähiger Link)
https://doi.org/10.4229/23rdEUPVSEC2008-2DV.1.8
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Open Access Green

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Physik: Publikationen
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Published

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LINCOT, D., ed. and others. The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference. München: WIP Renewable Energies, 2008, pp. 1863-1866. Available under: doi: 10.4229/23rdEUPVSEC2008-2DV.1.8

Zusammenfassung

Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures, so without a subsequent firing step. In a recent publication we have shown that bulk lifetime improvement in mc-Si takes place during PECVD SiNx deposition at 450°C in a PECVD furnace with direct plasma and low plasma generator frequency. In this work we study the bulk hydrogenation of mc-Si during SiNx deposition in different PECVD systems with direct and remote plasma. Tests were performed on p-type and n-type wafers from mc-Si ingots, p-type String Ribbon wafers and p-type EFG ribbon wafers. Neighbouring and adjacent wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was provided with an iodine-ethanol solution. Significant bulk lifetime improvement in mc-Si takes place during SiNx deposition at low temperatures in PECVD systems with direct and remote plasma, without additional firing step. The effect varies for different mc-Si materials, however, a general statement for all mc-Si materials is difficult.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Bulk hydrogenation, PECVD-SiN, mc-Si

Konferenz

23rd European Photovoltaic Solar Energy Conference, EU PVSEC, 1. Sept. 2008 - 5. Sept. 2008, Valencia, Spain
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ISO 690HERZOG, Bernhard, Giso HAHN, Marc HOFMANN, Ingrid G. ROMIJN, Arthur W. WEEBER, 2008. Bulk hydrogenation in mc-Si by PECVD SiNx deposition using direct and remote plasma. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC. Valencia, Spain, 1. Sept. 2008 - 5. Sept. 2008. In: LINCOT, D., ed. and others. The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference. München: WIP Renewable Energies, 2008, pp. 1863-1866. Available under: doi: 10.4229/23rdEUPVSEC2008-2DV.1.8
BibTex
@inproceedings{Herzog2008hydro-985,
  year={2008},
  doi={10.4229/23rdEUPVSEC2008-2DV.1.8},
  title={Bulk hydrogenation in mc-Si by PECVD SiNx deposition using direct and remote plasma},
  publisher={WIP Renewable Energies},
  address={München},
  booktitle={The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference},
  pages={1863--1866},
  editor={Lincot, D.},
  author={Herzog, Bernhard and Hahn, Giso and Hofmann, Marc and Romijn, Ingrid G. and Weeber, Arthur W.}
}
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