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Theory of strain-induced confinement in transition metal dichalcogenide monolayers

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2018

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https://doi.org/10.1103/PhysRevB.97.195454
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http://arxiv.org/abs/1803.09658

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European Union (EU): 676108

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Physical Review B. 2018, 97(19), 195454. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.97.195454

Zusammenfassung

Recent experimental studies of out-of-plane straining geometries of transition metal dichalchogenide (TMD) monolayers have demonstrated sufficient band-gap renormalization for device application, such as single-photon emitters. Here, a simple continuum-mechanical plate-theory approach is used to estimate the topography of TMD monolayers layered atop nanopillar arrays. From such geometries, the induced conduction-band potential and band-gap renormalization are given, demonstrating a curvature of the potential that is independent of the height of the deforming nanopillar. Additionally, with a semiclassical WKB approximation, the expected escape rate of electrons in the strain potential may be calculated as a function of the height of the deforming nanopillar. This approach is in accordance with experiment, supporting recent findings suggesting that increasing nanopillar height decreases the linewidth of the single-photon emitters observed at the tip of the pillar and predicting the shift in photon energy with nanopillar height for systems with consistent topography.

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ISO 690BROOKS, Matthew, Guido BURKARD, 2018. Theory of strain-induced confinement in transition metal dichalcogenide monolayers. In: Physical Review B. 2018, 97(19), 195454. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.97.195454
BibTex
@article{Brooks2018Theor-42667,
  year={2018},
  doi={10.1103/PhysRevB.97.195454},
  title={Theory of strain-induced confinement in transition metal dichalcogenide monolayers},
  number={19},
  volume={97},
  issn={2469-9950},
  journal={Physical Review B},
  author={Brooks, Matthew and Burkard, Guido},
  note={Article Number: 195454}
}
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