Publikation: Avoiding boron-oxygen related degradation in highly boron doped Cz silicon
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Lifetime degradation in Cz-grown silicon due to the formation of recombination active complexes consisting of boron and oxygen limits the efficiency potential of Cz-Si solar cells. In this contribution, a new approach to avoid this special type of degradation is presented. It is shown that there exists an additional state of the complex beside the ‘annealed’, weak recombination active state and the lifetime limiting, ‘degraded’ state, which is stable under the typical working conditions and, more important, only weakly recombination active. A simple model based on observations as well as some properties of this so called ‘regenerated’ state and its formation kinetics will be presented.
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HERGUTH, Axel, Gunnar SCHUBERT, Martin KAES, Giso HAHN, 2006. Avoiding boron-oxygen related degradation in highly boron doped Cz silicon. 21st European Photovoltaic Solar Energy Conference : 21th EC PVSEC. Dresden, Germany, 4. Sept. 2006 - 8. Sept. 2006. In: POORTMANS, Jozef, ed. and others. Twentyfirst European Photovoltaic Solar Energy Conference : Proceedings of the International Conference. Munich: WIP-Renewable Energies, 2006, pp. 530-537. ISBN 978-1-60423-787-0BibTex
@inproceedings{Herguth2006Avoid-42206,
year={2006},
title={Avoiding boron-oxygen related degradation in highly boron doped Cz silicon},
isbn={978-1-60423-787-0},
publisher={WIP-Renewable Energies},
address={Munich},
booktitle={Twentyfirst European Photovoltaic Solar Energy Conference : Proceedings of the International Conference},
pages={530--537},
editor={Poortmans, Jozef},
author={Herguth, Axel and Schubert, Gunnar and Kaes, Martin and Hahn, Giso},
note={Auf CD-ROM}
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