Publikation: Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators
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2013
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The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for amorphous materials. Coupling to those defects relaxes the momentum selection rules, allowing energy transfer from discrete long wavelength resonator modes to the high frequency phonon environment.
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FAUST, Thomas, Johannes RIEGER, Maximilian SEITNER, Jörg P. KOTTHAUS, Eva M. WEIG, 2013. Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonatorsBibTex
@unpublished{Faust2013Signa-25032,
year={2013},
title={Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators},
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<dcterms:abstract xml:lang="eng">The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for amorphous materials. Coupling to those defects relaxes the momentum selection rules, allowing energy transfer from discrete long wavelength resonator modes to the high frequency phonon environment.</dcterms:abstract>
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