Publikation: Charge carrier transport mechanism through different oxides for (n) poly-Si/SiOx fired passivating contacts
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In recent years the mechanism of carrier transport through a junction of polycrystalline silicon (poly-Si) on an interface oxide has been extensively discussed for passivating contacts of crystalline silicon-based solar cells fabricated along the well-established high temperature route. In the fired passivating contact (FPC) approach, no extended crystallization is foreseen which also modifies the properties of the junction. Here, we investigate atmospheric pressure chemical vapor deposited (APCVD), phosphorus-doped (n) poly-Si, which is annealed at different temperatures and durations following the FPC approach. Symmetric lifetime samples show the passivation potential of the FPC approach with implied open circuit voltages (iVOC) values of up to 736 mV. Temperature-dependent specific contact resistivity measurements applying the transfer length method on differently grown interface oxides are used to identify tunneling or pinhole transport, or a combination of both. It is found that a transition from tunneling to pinhole transport surprisingly takes place already for annealing durations of a few seconds and is primarily impacted by annealing temperature instead of duration. Pinhole magnification studies via tetramethylammonium etching and scanning electron microscopy confirm the existence of pinholes in the interfacial oxides.
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OKKER, Tobias, Raphael GLATTHAAR, Sven SEREN, Giso HAHN, Barbara TERHEIDEN, 2024. Charge carrier transport mechanism through different oxides for (n) poly-Si/SiOx fired passivating contacts. In: Physica Status Solidi (RRL) - Rapid Research Letters. Wiley. 2024, 18(9), 2400099. ISSN 1862-6254. eISSN 1862-6270. Verfügbar unter: doi: 10.1002/pssr.202400099BibTex
@article{Okker2024-09Charg-70026, year={2024}, doi={10.1002/pssr.202400099}, title={Charge carrier transport mechanism through different oxides for (n) poly-Si/SiO<sub>x</sub> fired passivating contacts}, number={9}, volume={18}, issn={1862-6254}, journal={Physica Status Solidi (RRL) - Rapid Research Letters}, author={Okker, Tobias and Glatthaar, Raphael and Seren, Sven and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 2400099} }
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