Temperature dependence of optical properties for amorphous silicon at wavelengths of 632.8 and 752 nm

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Date
1993
Authors
Yavaṣ, Oğuz
Do, Nhan
Tam, Andrew C.
Leung, P.T.
Leung, Wing P.
Park, Hee K.
Grigoropoulos, Costas P.
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Optics Letters ; 18 (1993), 7. - pp. 540-542
Abstract
The temperature dependence of the optical properties for amorphous silicon is studied at wavelengths of 632.8 and 752 nm. Both the refractive index and extinction coefficient increase linearly with temperature for 752 nm, while the refractive index decreases and the extinction coefficient increases for 632.8 nm. The rate of increase of the extinction coefficient at 632.8 nm is twice as much as that for 752 nm.
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530 Physics
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ISO 690YAVAṢ, Oğuz, Nhan DO, Andrew C. TAM, P.T. LEUNG, Wing P. LEUNG, Hee K. PARK, Costas P. GRIGOROPOULOS, Johannes BONEBERG, Paul LEIDERER, 1993. Temperature dependence of optical properties for amorphous silicon at wavelengths of 632.8 and 752 nm. In: Optics Letters. 18(7), pp. 540-542. Available under: doi: 10.1364/OL.18.000540
BibTex
@article{Yavas1993Tempe-9182,
  year={1993},
  doi={10.1364/OL.18.000540},
  title={Temperature dependence of optical properties for amorphous silicon at wavelengths of 632.8 and 752 nm},
  number={7},
  volume={18},
  journal={Optics Letters},
  pages={540--542},
  author={Yavaṣ, Oğuz and Do, Nhan and Tam, Andrew C. and Leung, P.T. and Leung, Wing P. and Park, Hee K. and Grigoropoulos, Costas P. and Boneberg, Johannes and Leiderer, Paul}
}
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