Publikation:

Studies of compensation behaviour in p-Type mc-Silicon

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Herzog_opus-103872.pdf
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Datum

2009

Autor:innen

Knopf, C.
Wambach, K.

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-103872
DOI (zitierfähiger Link)
https://doi.org/10.4229/24thEUPVSEC2009-2BO.2.5
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Open Access Green

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Published

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SINKE, W., ed. and others. The compiled state-of-the-art of PV solar technology and deployment : 24th European Photovoltaic Solar Energy Conference and Exhibition. Munich, Germany: WIP-Renewable Energies, 2009, pp. 1015-1019. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2BO.2.5

Zusammenfassung

We study the effect of different compensation levels on the electrical quality of mc-silicon ingots, on the solar cell performance along the ingot height and on the carrier lifetime after different process steps. Therefore three different mc-Si ingots with various compensation levels were grown (one slightly compensated, one stronger compensated, one uncompensated reference). Wafers from selected positions over the ingot height were characterised and processed to solar cells. The results showed no difference in the solar cell performance except for the top region of the stronger compensated ingot, where the doping changes at about 85% ingot height from p-type to n-type. We observed a beneficial effect of higher resistivities on the minority carrier lifetime in the stronger compensated top region. This effect is strongly pronounced after P-gettering, due to the decreased negative impact of segregated impurities in the top region. The beneficial effect is related to the reduced net doping, i.e. reduced majority carrier concentration in the top region.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Multicrystalline Silicon, SoG-Silicon, Compensation

Konferenz

24th European Photovoltaic Solar Energy Conference, 21. Sept. 2009 - 25. Sept. 2009, Hamburg
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ISO 690HERZOG, Bernhard, Giso HAHN, C. KNOPF, K. WAMBACH, 2009. Studies of compensation behaviour in p-Type mc-Silicon. 24th European Photovoltaic Solar Energy Conference. Hamburg, 21. Sept. 2009 - 25. Sept. 2009. In: SINKE, W., ed. and others. The compiled state-of-the-art of PV solar technology and deployment : 24th European Photovoltaic Solar Energy Conference and Exhibition. Munich, Germany: WIP-Renewable Energies, 2009, pp. 1015-1019. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2BO.2.5
BibTex
@inproceedings{Herzog2009Studi-864,
  year={2009},
  doi={10.4229/24thEUPVSEC2009-2BO.2.5},
  title={Studies of compensation behaviour in p-Type mc-Silicon},
  isbn={3-936338-25-6},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={The compiled state-of-the-art of PV solar technology and deployment : 24th European Photovoltaic Solar Energy Conference and Exhibition},
  pages={1015--1019},
  editor={Sinke, W.},
  author={Herzog, Bernhard and Hahn, Giso and Knopf, C. and Wambach, K.}
}
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