Publikation:

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

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2019

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Mittmann, Terence
Materano, Monica
Lomenzo, Patrick D.
Park, Min Hyuk
Stolichnov, Igor
Cavalieri, Matteo
Zhou, Chuanzhen
Chung, Ching‐Chang
Jones, Jacob L.
et al.

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https://doi.org/10.1002/admi.201900042
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Advanced Materials Interfaces. Wiley. 2019, 6(11), 1900042. eISSN 2196-7350. Available under: doi: 10.1002/admi.201900042

Zusammenfassung

Thin film metal–insulator–metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical and structural methods. After annealing, the films show distinct ferroelectric properties. Grazing incidence X‐ray diffraction measurements reveal a dominant ferroelectric orthorhombic phase for thicknesses in the 10–50 nm range and a negligible non‐ferroelectric monoclinic phase fraction. Sputtering HfO2 with additional oxygen during the deposition decreases the remanent polarization. Overall, the impact of oxygen vacancies and interstitials in the HfO2 film during deposition and annealing is correlated to the phase formation process.

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530 Physik

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ferroelectricity, hafnia, orthorhombic phase, oxygen vacancies, sputtering

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ISO 690MITTMANN, Terence, Monica MATERANO, Patrick D. LOMENZO, Min Hyuk PARK, Igor STOLICHNOV, Matteo CAVALIERI, Chuanzhen ZHOU, Ching‐Chang CHUNG, Jacob L. JONES, Martina MÜLLER, 2019. Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering. In: Advanced Materials Interfaces. Wiley. 2019, 6(11), 1900042. eISSN 2196-7350. Available under: doi: 10.1002/admi.201900042
BibTex
@article{Mittmann2019Origi-53620,
  year={2019},
  doi={10.1002/admi.201900042},
  title={Origin of Ferroelectric Phase in Undoped HfO<sub>2</sub> Films Deposited by Sputtering},
  number={11},
  volume={6},
  journal={Advanced Materials Interfaces},
  author={Mittmann, Terence and Materano, Monica and Lomenzo, Patrick D. and Park, Min Hyuk and Stolichnov, Igor and Cavalieri, Matteo and Zhou, Chuanzhen and Chung, Ching‐Chang and Jones, Jacob L. and Müller, Martina},
  note={Article Number: 1900042}
}
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