Compensation of the sputter damage during a-Si deposition for poly-Si/SiOx passivating contacts by ex-situ p-doping

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2019
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urn:nbn:de:bsz:352-2-bob4o9m1wvff3
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10.1063/1.5123845
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SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium / Poortmans, Jef et al. (ed.). - Melville, New York : AIP Publishing, 2019. - (AIP Conference Proceedings ; 2147,1). - 040018. - eISSN 0094-243X. - ISBN 978-0-7354-1892-9
Abstract
The rf magnetron sputter deposition of a-Si during fabrication of passivating contacts based on poly-Si on top of an interfacial silicon oxide (poly-Si/SiOx) and a possible sputter damage is investigated, as it is also observed during transparent conductive oxide sputtering for heterojunction solar cells. It is shown that the high temperature anneal for partial crystallization of the sputtered a-Si has a detrimental effect on passivation quality. However, doping during partial crystallization of the a-Si layer by a POCl3-diffusion compensates this decrease of passivation quality by a field effect passivation. Moreover, a subsequent hydrogenation of the interface leads to implied open circuit voltages of up to 719 mV and saturation current densities of down to 9 fA/cm2. Furthermore, depth profiles of the dopants measured by glow discharge optical emission spectroscopy (GD-OES) and electrochemical capacitance-voltage profiling (ECV) reveal a significant difference between total (∼3.5·1021 cm−3) and electrically active (∼5·1020 cm−3) phosphorous atomic density in the poly-Si layer. From these depth profiles also a pile-up of electrically inactive phosphorous close to, but a few nanometers off the interfacial oxide was observed.
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530 Physics
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SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics, Apr 8, 2019 - Apr 10, 2019, Leuven, Belgium
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ISO 690STEFFENS, Jonathan, Johannes RINDER, Giso HAHN, Barbara TERHEIDEN, 2019. Compensation of the sputter damage during a-Si deposition for poly-Si/SiOx passivating contacts by ex-situ p-doping. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York:AIP Publishing, 040018. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123845
BibTex
@inproceedings{Steffens2019Compe-46824,
  year={2019},
  doi={10.1063/1.5123845},
  title={Compensation of the sputter damage during a-Si deposition for poly-Si/SiO<sub>x</sub> passivating contacts by ex-situ p-doping},
  number={2147,1},
  isbn={978-0-7354-1892-9},
  publisher={AIP Publishing},
  address={Melville, New York},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium},
  editor={Poortmans, Jef},
  author={Steffens, Jonathan and Rinder, Johannes and Hahn, Giso and Terheiden, Barbara},
  note={Article Number: 040018}
}
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    <dcterms:abstract xml:lang="eng">The rf magnetron sputter deposition of a-Si during fabrication of passivating contacts based on poly-Si on top of an interfacial silicon oxide (poly-Si/SiO&lt;sub&gt;x&lt;/sub&gt;) and a possible sputter damage is investigated, as it is also observed during transparent conductive oxide sputtering for heterojunction solar cells. It is shown that the high temperature anneal for partial crystallization of the sputtered a-Si has a detrimental effect on passivation quality. However, doping during partial crystallization of the a-Si layer by a POCl&lt;sub&gt;3&lt;/sub&gt;-diffusion compensates this decrease of passivation quality by a field effect passivation. Moreover, a subsequent hydrogenation of the interface leads to implied open circuit voltages of up to 719 mV and saturation current densities of down to 9 fA/cm&lt;sup&gt;2&lt;/sup&gt;. Furthermore, depth profiles of the dopants measured by glow discharge optical emission spectroscopy (GD-OES) and electrochemical capacitance-voltage profiling (ECV) reveal a significant difference between total (∼3.5·10&lt;sup&gt;21&lt;/sup&gt; cm&lt;sup&gt;−3&lt;/sup&gt;) and electrically active (∼5·10&lt;sup&gt;20&lt;/sup&gt; cm&lt;sup&gt;−3&lt;/sup&gt;) phosphorous atomic density in the poly-Si layer. From these depth profiles also a pile-up of electrically inactive phosphorous close to, but a few nanometers off the interfacial oxide was observed.</dcterms:abstract>
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