Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance
Lade...
Dateien
Datum
2010
Autor:innen
Peter, Kristian
Glatz-Reichenbach, Joachim
Wefringhaus, Eckard
Schubert, Gunnar
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
EUROPÄISCHE KOMMISSION GEMEINSAME FORSCHUNGSSTELLE, , ed.. EU PVSEC proceedings : 25th European Photovoltaic Solar Energy Conference and Exhibition. Munich, Germany: WIP-Renewable Energies, 2010, pp. 2176-2179. ISBN 3-936338-26-4. Available under: doi: 10.4229/25thEUPVSEC2010-2CV.3.31
Zusammenfassung
A full area Al-alloyed back surface field layer usually forms the rear side of standard p-type Si solar cells. However, a dielectric rear surface passivation with only small local contact openings has significant advantages over the standard fully covered Al back contact, and enables higher efficiencies on thinner wafers. This article presents a specific analysis of the formation of small localized contacts between Al and Si. We observe that the contact resistivity of screen printed Al fingers depends on the homogeneity of the Al-Si alloy formation below the contacts. The contact resistivity decreases when reducing the contact area, due to a more homogeneous alloy formation. The optimal contact formation is achieved with contact areas smaller than 50 – 80 mm in diameter.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
solar cells, silicon alloys, aluminium, alloys, compounds, gravity, sintering, contact resistance, chemical interdiffusion, firing (materials), dielectric thin films, passivation, protective coating, scanning electron microscopy, back-surface-field, voids (solid), kirkendall effect
Konferenz
25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion, 6. Sept. 2010 - 10. Sept. 2010, Valencia, Spain
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690
URREJOLA, Elias, Kristian PETER, Joachim GLATZ-REICHENBACH, Eckard WEFRINGHAUS, Heiko PLAGWITZ, Gunnar SCHUBERT, 2010. Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, 6. Sept. 2010 - 10. Sept. 2010. In: EUROPÄISCHE KOMMISSION GEMEINSAME FORSCHUNGSSTELLE, , ed.. EU PVSEC proceedings : 25th European Photovoltaic Solar Energy Conference and Exhibition. Munich, Germany: WIP-Renewable Energies, 2010, pp. 2176-2179. ISBN 3-936338-26-4. Available under: doi: 10.4229/25thEUPVSEC2010-2CV.3.31BibTex
@inproceedings{Urrejola2010Influ-19490,
year={2010},
doi={10.4229/25thEUPVSEC2010-2CV.3.31},
title={Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance},
isbn={3-936338-26-4},
publisher={WIP-Renewable Energies},
address={Munich, Germany},
booktitle={EU PVSEC proceedings : 25th European Photovoltaic Solar Energy Conference and Exhibition},
pages={2176--2179},
editor={Europäische Kommission Gemeinsame Forschungsstelle},
author={Urrejola, Elias and Peter, Kristian and Glatz-Reichenbach, Joachim and Wefringhaus, Eckard and Plagwitz, Heiko and Schubert, Gunnar}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/19490">
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/19490/2/Urrejola_Influence.pdf"/>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dc:contributor>Peter, Kristian</dc:contributor>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dcterms:bibliographicCitation>First publ. in: EU PVSEC proceedings : 25th European Photovoltaic Solar Energy Conference and Exhibition ; 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain / Europäische Kommission Gemeinsame Forschungsstelle. - München : WIP-Renewable Energies, 2010. - pp. 2176-2179. - ISBN 3-936338-26-4</dcterms:bibliographicCitation>
<dcterms:issued>2010</dcterms:issued>
<dc:contributor>Plagwitz, Heiko</dc:contributor>
<dc:contributor>Urrejola, Elias</dc:contributor>
<bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/19490"/>
<dc:creator>Schubert, Gunnar</dc:creator>
<dc:contributor>Schubert, Gunnar</dc:contributor>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/>
<dcterms:title>Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance</dcterms:title>
<dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
<dc:contributor>Wefringhaus, Eckard</dc:contributor>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<dcterms:abstract xml:lang="eng">A full area Al-alloyed back surface field layer usually forms the rear side of standard p-type Si solar cells. However, a dielectric rear surface passivation with only small local contact openings has significant advantages over the standard fully covered Al back contact, and enables higher efficiencies on thinner wafers. This article presents a specific analysis of the formation of small localized contacts between Al and Si. We observe that the contact resistivity of screen printed Al fingers depends on the homogeneity of the Al-Si alloy formation below the contacts. The contact resistivity decreases when reducing the contact area, due to a more homogeneous alloy formation. The optimal contact formation is achieved with contact areas smaller than 50 – 80 mm in diameter.</dcterms:abstract>
<dc:creator>Peter, Kristian</dc:creator>
<dc:creator>Wefringhaus, Eckard</dc:creator>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:creator>Plagwitz, Heiko</dc:creator>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/19490/2/Urrejola_Influence.pdf"/>
<dc:rights>terms-of-use</dc:rights>
<dc:contributor>Glatz-Reichenbach, Joachim</dc:contributor>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-14T19:53:55Z</dc:date>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-14T19:53:55Z</dcterms:available>
<dc:language>eng</dc:language>
<dc:creator>Glatz-Reichenbach, Joachim</dc:creator>
<dc:creator>Urrejola, Elias</dc:creator>
</rdf:Description>
</rdf:RDF>
