Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance

Urrejola, Elias; Peter, Kristian; Glatz-Reichenbach, Joachim; Wefringhaus, Eckard; Plagwitz, Heiko; Schubert, Gunnar

Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance

Files

Urrejola_Influence.pdf(3.56 MB)

Date

2010

Authors

Urrejola, Elias

Peter, Kristian

Glatz-Reichenbach, Joachim

Wefringhaus, Eckard

Plagwitz, Heiko

Schubert, Gunnar

Publication type

Contribution to a conference collection

Published in

EU PVSEC proceedings : 25th European Photovoltaic Solar Energy Conference and Exhibition / Europäische Kommission Gemeinsame Forschungsstelle (ed.). - Munich, Germany : WIP-Renewable Energies, 2010. - pp. 2176-2179. - ISBN 3-936338-26-4

Abstract

A full area Al-alloyed back surface field layer usually forms the rear side of standard p-type Si solar cells. However, a dielectric rear surface passivation with only small local contact openings has significant advantages over the standard fully covered Al back contact, and enables higher efficiencies on thinner wafers. This article presents a specific analysis of the formation of small localized contacts between Al and Si. We observe that the contact resistivity of screen printed Al fingers depends on the homogeneity of the Al-Si alloy formation below the contacts. The contact resistivity decreases when reducing the contact area, due to a more homogeneous alloy formation. The optimal contact formation is achieved with contact areas smaller than 50 – 80 mm in diameter.

Subject (DDC)

530 Physics

Keywords

solar cells,silicon alloys,aluminium,alloys,compounds,gravity,sintering,contact resistance,chemical interdiffusion,firing (materials),dielectric thin films,passivation,protective coating,scanning electron microscopy,back-surface-field,voids (solid),kirkendall effect

Conference

25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion, Sep 6, 2010 - Sep 10, 2010, Valencia, Spain

Cite This

ISO 690

URREJOLA, Elias, Kristian PETER, Joachim GLATZ-REICHENBACH, Eckard WEFRINGHAUS, Heiko PLAGWITZ, Gunnar SCHUBERT, 2010. Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, Sep 6, 2010 - Sep 10, 2010. In: EUROPÄISCHE KOMMISSION GEMEINSAME FORSCHUNGSSTELLE, , ed.. EU PVSEC proceedings : 25th European Photovoltaic Solar Energy Conference and Exhibition. Munich, Germany:WIP-Renewable Energies, pp. 2176-2179. ISBN 3-936338-26-4. Available under: doi: 10.4229/25thEUPVSEC2010-2CV.3.31

BibTex

@inproceedings{Urrejola2010Influ-19490,
  year={2010},
  doi={10.4229/25thEUPVSEC2010-2CV.3.31},
  title={Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance},
  isbn={3-936338-26-4},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={EU PVSEC proceedings : 25th European Photovoltaic Solar Energy Conference and Exhibition},
  pages={2176--2179},
  editor={Europäische Kommission Gemeinsame Forschungsstelle},
  author={Urrejola, Elias and Peter, Kristian and Glatz-Reichenbach, Joachim and Wefringhaus, Eckard and Plagwitz, Heiko and Schubert, Gunnar}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/19490">
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/19490/2/Urrejola_Influence.pdf"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Peter, Kristian</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:bibliographicCitation>First publ. in: EU PVSEC proceedings : 25th European Photovoltaic Solar Energy Conference and Exhibition ; 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain / Europäische Kommission Gemeinsame Forschungsstelle. - München : WIP-Renewable Energies, 2010. - pp. 2176-2179. - ISBN 3-936338-26-4</dcterms:bibliographicCitation>
    <dcterms:issued>2010</dcterms:issued>
    <dc:contributor>Plagwitz, Heiko</dc:contributor>
    <dc:contributor>Urrejola, Elias</dc:contributor>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/19490"/>
    <dc:creator>Schubert, Gunnar</dc:creator>
    <dc:contributor>Schubert, Gunnar</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/>
    <dcterms:title>Influence of the Al-Si Alloy Formation in narrow dielectric barrier openings on the specific contact resistance</dcterms:title>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:contributor>Wefringhaus, Eckard</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">A full area Al-alloyed back surface field layer usually forms the rear side of standard p-type Si solar cells. However, a dielectric rear surface passivation with only small local contact openings has significant advantages over the standard fully covered Al back contact, and enables higher efficiencies on thinner wafers. This article presents a specific analysis of the formation of small localized contacts between Al and Si. We observe that the contact resistivity of screen printed Al fingers depends on the homogeneity of the Al-Si alloy formation below the contacts. The contact resistivity decreases when reducing the contact area, due to a more homogeneous alloy formation. The optimal contact formation is achieved with contact areas smaller than 50 – 80 mm in diameter.</dcterms:abstract>
    <dc:creator>Peter, Kristian</dc:creator>
    <dc:creator>Wefringhaus, Eckard</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Plagwitz, Heiko</dc:creator>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/19490/2/Urrejola_Influence.pdf"/>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Glatz-Reichenbach, Joachim</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-14T19:53:55Z</dc:date>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-14T19:53:55Z</dcterms:available>
    <dc:language>eng</dc:language>
    <dc:creator>Glatz-Reichenbach, Joachim</dc:creator>
    <dc:creator>Urrejola, Elias</dc:creator>
  </rdf:Description>
</rdf:RDF>