Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

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2011
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Energy Procedia. 2011, 8, pp. 487-492. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.170
Zusammenfassung

Efficiencies of large area n-type silicon solar cells with a screen printed rear side aluminum-alloyed emitter are mainly limited by their front surface recombination velocity. The front surface therefore has to be passivated by an effective passivation layer combined with a front surface field (FSF).

In this work we investigate the influence of the front surface passivation quality and the base resistivity for a selective FSF n-type solar cell. The potential of this solar cell concept is assessed by PC1D simulations and QSSPC measurements. Furthermore we present solar cell results of all screen printed large area n-type Cz-Si solar cells with an aluminum rear emitter and a selective etch-back FSF passivated by a PECVD-SiNx or a SiO2/SiNx stack. The applied processing sequence is based on industrially available processing equipment and results in an independently confirmed cell efficiency of 19.4% on a 6” solar cell.

Zusammenfassung in einer weiteren Sprache
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530 Physik
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n-type, Al emitter, selective
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ISO 690BOOK, Felix, Thomas WIEDENMANN, Gunnar SCHUBERT, Heiko PLAGWITZ, Giso HAHN, 2011. Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter. In: Energy Procedia. 2011, 8, pp. 487-492. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.170
BibTex
@article{Book2011Influ-15917,
  year={2011},
  doi={10.1016/j.egypro.2011.06.170},
  title={Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter},
  volume={8},
  journal={Energy Procedia},
  pages={487--492},
  author={Book, Felix and Wiedenmann, Thomas and Schubert, Gunnar and Plagwitz, Heiko and Hahn, Giso}
}
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