Gate-control of superconducting current : relevant parameters and perspectives

Abstract

In modern electronics based on conventional metal-oxide semiconductor (CMOS) technology, the logic state of a device is controlled by a gate voltage (VG). The applied VG changes the density of charge carriers flowing through a small (nanoscale-size) device constriction, and this effect sets the logic state of the device. The superconducting equivalent of such effect had remained unknown until recently, when it has been shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a metallic superconductor. This gate-controlled supercurrent (GCS) effect has raised great interest because it can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The mechanism underlying the GCS, however, remains under debate. Here, after reviewing the mechanisms proposed to explain the GCS effect, we determine the material and device parameters that mainly affect a GCS, based on the studies reported to date. Our analysis suggests that some mechanisms are only relevant for specific experiments, and it reveals the importance of parameters like structural disorder and surface properties for a GCS. We also propose studies that can answer the remaining open questions on the GCS effect, which is key to control such effect for its future technological applications.