Photocarrier thermalization bottleneck in graphene

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Physical Review B. 2019, 99(15), 155410. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.99.155410
Zusammenfassung

We present a theoretical study of photocarrier dynamics in graphene due to electron-phonon (EP) interactions. Using the relaxation-time approximation (RTA) with parameters determined from density functional theory (DFT) and a complementary explicitly solvable model, we show that the photocarrier thermalization time changes by orders of magnitude, when the excitation energy is reduced from 1 eV to the 100 meV range. In detail the ultrafast thermalization at low temperatures takes place on a femtosecond timescale via optical phonon emission, but slows down to picoseconds once excitation energies become comparable with these optical phonon energy quanta. In the latter regime thermalization times exhibit a pronounced dependence on temperature. Our DFT-based model includes all the inter- and intraband transitions due to EP scattering. Thanks to the high melting point of graphene we extend our studies up to 2000 K and show that such high temperatures reduce the photocarrier thermalization time through phonon absorption.

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ISO 690YADAV, Dinesh, Maxim TRUSHIN, Fabian PAULY, 2019. Photocarrier thermalization bottleneck in graphene. In: Physical Review B. 2019, 99(15), 155410. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.99.155410
BibTex
@article{Yadav2019Photo-45719,
  year={2019},
  doi={10.1103/PhysRevB.99.155410},
  title={Photocarrier thermalization bottleneck in graphene},
  number={15},
  volume={99},
  issn={2469-9950},
  journal={Physical Review B},
  author={Yadav, Dinesh and Trushin, Maxim and Pauly, Fabian},
  note={Article Number: 155410}
}
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